D. Uffmann

Nokia (Germany) — Germany

Engineering · Physical Sciences

8h-index958citations23works0.02yr avg
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Research Topics

Semiconductor materials and devices(10), Advancements in Semiconductor Devices and Circuit Design(9), GaN-based semiconductor devices and materials(6), Semiconductor materials and interfaces(5), Silicon Carbide Semiconductor Technologies(3)

Publications23 total

Software radio approach for re-configurable multi-standard radios
2003· 32 cited
Re-configurable multi-standard terminal for heterogeneous networks
2003· 3 cited
Low resistance epitaxial CoSi/sub 2/-contacts for VLSI circuits
2002
Receiver Architecture, Multimedia Car Platform (MCP), Technical Report, Deliverable 8B, March 2001
elib (German Aerospace Center)·2001
Synthesis and growth of ZnGeP2 crystals for nonlinear optical applications
Journal of Crystal Growth·2000· 41 cited
MCP Terminal Specification, Multimedia Car Platform (MCP), Technical Report, April 2000
elib (German Aerospace Center)·2000
Smooth GaN surfaces by photoinduced electro-chemical etching
Materials Science and Engineering B·1999· 11 cited
Raman spectroscopy of disorder effects in AlxGa1−xN solid solutions
Materials Science and Engineering B·1999· 9 cited
Influence of pre-etching on specific contact parameters for metal-GaN contacts
Semiconductor Science and Technology·1999· 6 cited
Phonon dispersion and Raman scattering in hexagonal GaN and AlN
Physical review. B, Condensed matter·1998· 812 cited
Characterization of snap-back breakdown and its temperature dependence up to 300°C including circuit-level model and simulation
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1998· 2 cited
Current Controlled Photoelectrochemical Etching of Gan Leaving Smooth Surfaces
MRS Proceedings·1997· 13 cited
In<sub>x</sub>Ga<sub>(1-x)</sub>N Alloys as Electronic Materials
MRS Proceedings·1997· 2 cited
The surface radicals of diamond
Carbon·1997· 14 cited
Digital standard cells and operational amplifiers for operation up to 250 degrees C using low-cost CMOS technology
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1996
Snap-back temperature dependence for an Epi-CMOS ASIC-process up to 250 degrees C
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1996
Growth, preparation and surface modification of microcrystalline diamond powder for the synthesis of diamond ceramics
Journal of the European Ceramic Society·1996· 10 cited
Temperature Dependence of Latch-up Holding Point for Majority Carrier Guards up to 250°C
1996
Latch-up temperature dependence of majority carrier guard structures up to 250-degrees C
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1995
Latchup Design Precautions for 1.0 Micron Junction Isolated CMOS ASICs Operating at Temperatures Up to 525K
European Solid-State Device Research Conference·1994
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Frequent Co-authors

J. Aderhold(9), J. Stemmer(9), O. Semchinova(8), J. Graul(4), B. Oelkrug(4), T. Rotter(3), Jörg Ackermann(3), C. Adamski(3), V. Yu. Davydov(2), I. N. Goncharuk(2), A. N. Smirnov(2), J. Brakensiek(2), H. Martin Bücker(2), A. Droge(2), E. P. Smirnov(2), D. Mistele(2), S. Meiser(2), Ludwig Niewöhner(2), C. Schäffer(2), T. Dorsch(2)