J. Furthm�ller

Friedrich Schiller University Jena — Germany

Physics and Astronomy · Physical Sciences

7h-index1.9kcitations7works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(4), Ga2O3 and related materials(4), ZnO doping and properties(2), Semiconductor materials and devices(2), Boron and Carbon Nanomaterials Research(2)

Publications7 total

Band Gap of Hexagonal InN and InGaN Alloys
physica status solidi (b)·2002· 306 citedOpen Access
Carbon-Based Defects in GaN: Doping Behaviour
physica status solidi (b)·2002· 12 cited
Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)
physica status solidi (b)·2002· 286 cited
Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
physica status solidi (b)·2002· 985 cited
First-Principles Calculation of Optical Properties: Application to Embedded Ge and Si Dots
physica status solidi (b)·2001· 11 cited
Neutral Vacancies in Group-IV Semiconductors
physica status solidi (b)·1998· 48 citedOpen Access
Polytypism and Properties of Silicon Carbide
physica status solidi (b)·1997· 250 cited

Frequent Co-authors

F. Bechstedt(7), V. Yu. Davydov(3), A. A. Klochikhin(3), V. V. Emtsev(3), Hisatomo Harima(3), J. Aderhold(3), J. Graul(3), А. В. Мудрый(2), S. V. Ivanov(2), Akihiro Hashimoto(2), Akio Yamamoto(2), E. E. Häller(2), A. Zywietz(2), R. P. Seĭsyan(1), С. В. Иванов(1), O. Semchinova(1), D. A. Kurdyukov(1), V. A. Vekshin(1), V. V. Vekshin(1), А. В. Мудрый(1)