L.P. Ramberg

Kista Photonics Research Center — Sweden

Physics and Astronomy · Physical Sciences

7h-index284citations16works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(9), Semiconductor materials and devices(8), Advancements in Semiconductor Devices and Circuit Design(8), Silicon Carbide Semiconductor Technologies(6), GaN-based semiconductor devices and materials(3)

Publications16 total

Junction barrier Schottky diodes in 6H SiC
Solid-State Electronics·1998· 16 cited
High voltage silicon carbide Junction Barrier Schottky rectifiers
1997
A 4.5 kV 6H silicon carbide rectifier
Applied Physics Letters·1995· 117 cited
Characteristics of Passivated High-Voltage Silicon Carbide Diodes
1994· 2 cited
Feasibility of 4.5 kV and 10 kV Silicon Carbide IGBTs
1994· 1 cited
High-voltage silicon carbide rectifiers – results of experiments and simulation
Physica Scripta·1994· 1 cited
Abrupt interface AlGaAs/GaAs heterojunction bipolar transistors: Carrier heating and junction characteristics
Journal of Applied Physics·1988· 22 cited
Temperature variable noise and electrical characteristics of Au-Ga-As Schottky barrier millimeter-wave mixer diodes
IEEE Transactions on Microwave Theory and Techniques·1988· 7 cited
Transitions in the reflection high-energy electron-diffraction pattern as a substrate temperature probe in molecular-beam epitaxy
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena·1987· 13 cited
Comparison of compositionally graded to abrupt emitter-base junctions used in the heterojunction bipolar transistor
Journal of Applied Physics·1987· 31 cited
Lattice-strained heterojunction InGaAs/GaAs bipolar structures: Recombination properties and device performance
Journal of Applied Physics·1987· 54 cited
Use of pseudomorphic GaInAs in Heterojunction Bipolar Transistors
Journal of Crystal Growth·1987· 13 cited
IIIA-3 comparison of compositionally abrupt and graded emitter-base junctions in the heterojunction bipolar transistor
IEEE Transactions on Electron Devices·1986
High-frequency performance of lattice-strained heterojunction GaInAs/GaAs bipolar transistors
Electronics Letters·1986· 2 cited
Lattice-Strained Double Heterojunction InGaAs/GaAs Bipolar Transistors
Springer series in electrophysics·1986
A platinum evaporation source for molecular beam epitaxy applications
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·1986· 5 cited

Frequent Co-authors

P.M. Enquist(6), L.F. Eastman(6), F.E. Najjar(4), K. L. Kavanagh(4), Susan Savage(3), K. Bergman(2), Eugene A. Fitzgerald(2), Carl‐Mikael Zetterling(2), Fanny Dahlquist(2), Nils Lundberg(2), Mikael Östling(2), K. Rottner(2), T. G. Andersson(2), Ulf Gustafsson(2), Olof Kordina(1), J. P. Bergman(1), Anne Henry(1), Erik Janzén(1), Julien André(1), U. Lindefelt(1)