Erik Janzén

Kansas State University — United States

Engineering · Physical Sciences

70h-index18.9kcitations831works4.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(609), Semiconductor materials and devices(404), Copper Interconnects and Reliability(159), Thin-Film Transistor Technologies(144), Silicon and Solar Cell Technologies(136)

Publications831 total

Spatially Single-Cycle Polaritons in 2D Materials
2025
Isotope Substitution and Polytype Control for Point Defects Identification: The Case of the Ultraviolet Color Center in Hexagonal Boron Nitride
Physical Review X·2025· 5 citedOpen Access
Chalcogen Impurities in Silicon†
2024
Spin-dependent photodynamics of boron-vacancy centers in hexagonal boron nitride
Physical review. B./Physical review. B·2024· 17 citedOpen Access
Isotope substitution and polytype control for point defects identification: the case of the ultraviolet color center in hexagonal boron nitride
arXiv (Cornell University)·2024· 2 citedOpen Access
Spin-dependent photodynamics of boron-vacancy centers in hexagonal boron nitride
arXiv (Cornell University)·2024Open Access
Electroluminescence and Energy Transfer Mediated by Hyperbolic Polaritons
arXiv (Cornell University)·2023Open Access
Isotopic Control of the Boron-Vacancy Spin Defect in Hexagonal Boron Nitride
Physical Review Letters·2023· 33 citedOpen Access
Isotopic control of the boron-vacancy spin defect in hexagonal boron nitride
PubMed·2023· 6 citedOpen Access
Unexpected catalytic activity of nanorippled graphene
Proceedings of the National Academy of Sciences·2023· 56 citedOpen Access
Logistics Orchestration Layer – Anforderungen an die Orchestrierung modularer Logistiksysteme
VDI Verlag eBooks·2023· 2 cited
Optical properties of AlGaN/GaN epitaxial layers grown on different face GaN substrates
Materials Letters·2019· 12 cited
Wafer Scale On-Axis Homoepitaxial Growth of 4H-SiC(0001) for High-Power Devices: Influence of Different Gas Phase Chemistries and Growth Rate Limitations
Crystal Growth & Design·2019· 12 cited
Erratum: “A GaN–SiC hybrid material for high-frequency and power electronics” [Appl. Phys. Lett. <b>113</b>, 041605 (2018)]
Applied Physics Letters·2018· 6 citedOpen Access
A GaN–SiC hybrid material for high-frequency and power electronics
Applied Physics Letters·2018· 90 citedOpen Access
(Invited) A Revolutionary GaN-on-SiC Heteroepitaxy for High-Frequency Power Transistors
ECS Meeting Abstracts·2018
Diffusion of the Carbon Vacancy in a-Cut and c-Cut n-Type 4H-SiС
Materials science forum·2018· 5 cited
V Si based vector-magnetometry in 4H-Silicon Carbide - status quo and future
Bulletin of the American Physical Society·2018
Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Species
The Journal of Physical Chemistry C·2017· 30 cited
Defects in silicon carbide grown by fluorinated chemical vapor deposition chemistry
Physica B Condensed Matter·2017· 6 cited
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Frequent Co-authors

Nguyên Tiên Són(17), Anne Henry(13), Olof Kordina(10), C. Hallin(9), Ádám Gali(8), J. P. Bergman(8), Takeshi Ohshima(5), A. Ellison(5), Andrey O. Konstantinov(5), Péter Deák(4), Weimin Chen(4), B. Ḿonemar(4), L. Storasta(3), T. Umeda(3), Junichi Isoya(3), H. G. Grimmeiss(3), E. Sörman(3), Q. Wahab(3), Ivan G. Ivanov(3), Niklas Rorsman(3)