B. Ḿonemar

Physics and Astronomy · Physical Sciences

51h-index13.0kcitations673works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(341), GaN-based semiconductor devices and materials(291), Semiconductor materials and devices(166), Ga2O3 and related materials(136), ZnO doping and properties(118)

Publications673 total

Optical Characterisation of GaN and Related Materials
2021· 1 cited
Electronic properties of the residual donor in unintentionally doped β-Ga2O3
Journal of Applied Physics·2016· 92 citedOpen Access
Anisotropy, phonon modes, and free charge carrier parameters in monoclinic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>β</mml:mi></mml:math>-gallium oxide single crystals
Physical review. B./Physical review. B·2016· 206 citedOpen Access
First Demonstration of β-Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; Schottky Barrier Diode with Field Plate Edge Termination
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials·2015
Electron transport in MOVPE grown InGaN/GaN MQW in moderate magnetic field
Università del Salento·2015Open Access
Microstructure evolution in MOVPE-grown AlN/GaN superlattices with different periods
Università del Salento·2015Open Access
In-plane strain anisotropy and lattice parameters of GaN films grown on a-plane sapphire by metalorganic vapor phase epitaxy
Università del Salento·2015Open Access
AlGaN Quantum Well Heterostructures for Mid-Ultraviolet Emitters with Improved Room Temperature Quantum Efficiency
Acta Physica Polonica A·2014· 2 citedOpen Access
Atom probe tomography study of Mg-doped GaN layers
Nanotechnology·2014· 26 cited
Effect of Mg doping on the structural and free-charge carrier properties of InN films
Journal of Applied Physics·2014· 18 citedOpen Access
Properties of the main Mg-related acceptors in GaN from optical and structural studies
Journal of Applied Physics·2014· 54 citedOpen Access
A luminescence study of doping effects in InP-based radial nanowire structures
Journal of Physics Conference Series·2013Open Access
Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN
Applied Physics Letters·2013· 19 citedOpen Access
Crystal phase engineered quantum wells in ZnO nanowires
Nanotechnology·2013· 17 citedOpen Access
Surface potential effect on excitons in AlGaN/GaN quantum well structures
Applied Physics Letters·2013· 11 cited
Effect of silicon and oxygen doping on donor bound excitons in bulk GaN
Physical Review B·2011· 48 citedOpen Access
Delay and distortion of slow light pulses by excitons in ZnO
Physical Review B·2011· 28 citedOpen Access
Optical properties of InN/In<sub>0.73</sub>Ga<sub>0.27</sub>N multiple quantum wells studied by spectroscopic ellipsometry
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2011· 1 cited
Transient photoluminescence of shallow donor bound excitons in GaN
Physical Review B·2010· 38 citedOpen Access
Radiation-induced defects in GaN
Physica Scripta·2010· 8 cited
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Frequent Co-authors

J. P. Bergman(10), Hiroshi Amano(9), Weimin Chen(8), Isamu Akasaki(8), T. Paskova(7), Vanya Darakchieva(6), I. A. Buyanova(6), Г. Позина(6), Erik Janzén(6), M. Schubert(4), T. V. Shubina(4), O. Lagerstedt(4), Nguyên Tiên Són(4), A. Kasic(3), H. P. Gíslason(3), Olof Kordina(3), Andrey O. Konstantinov(3), P. O. Holtz(3), Ivan G. Ivanov(3), Michael Lorenz(2)