J. P. Bergman

Linköping University — Sweden

Physics and Astronomy · Physical Sciences

38h-index5.1kcitations252works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(118), GaN-based semiconductor devices and materials(104), Semiconductor materials and devices(70), Silicon Carbide Semiconductor Technologies(62), Ga2O3 and related materials(58)

Publications252 total

The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers
APL Materials·2023· 19 citedOpen Access
Optical Characterisation of GaN and Related Materials
2021· 1 cited
<i>(Invited) </i>Controlling the Carbon Vacancy in 4H-SiC by Thermal Processing
ECS Transactions·2018· 1 cited
(Invited) Controlling the Carbon Vacancy in 4H-SiC By Thermal Processing
ECS Meeting Abstracts·2018
Depth-Resolved Carrier Lifetime Measurements in 4H-SiC Epilayers Monitoring Carbon Vacancy Elimination
Materials science forum·2017· 4 cited
Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers
Materials science forum·2017· 1 cited
In‐grown stacking‐faults in 4H‐SiC epilayers grown on 2° off‐cut substrates
physica status solidi (b)·2015· 6 cited
AlGaN Quantum Well Heterostructures for Mid-Ultraviolet Emitters with Improved Room Temperature Quantum Efficiency
Acta Physica Polonica A·2014· 2 citedOpen Access
Carrier Lifetime Controlling Defects <i>Z</i><sub>1/2</sub> and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC
Crystal Growth & Design·2014· 18 citedOpen Access
Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and μ-PCD
Materials science forum·2014· 3 citedOpen Access
Improved Epilayer Surface Morphology on 2˚ Off-Cut 4H-SiC Substrates
Materials science forum·2014· 4 cited
Properties of the main Mg-related acceptors in GaN from optical and structural studies
Journal of Applied Physics·2014· 54 citedOpen Access
On-axis 4H SiC Epitaxial Layers for High Power Applications
ECS Meeting Abstracts·2013Open Access
Suppression of the quantum-confined Stark effect in AlxGa1−xN/AlyGa1−yN corrugated quantum wells
Journal of Applied Physics·2013· 10 citedOpen Access
The influence of growth conditions on carrier lifetime in 4H–SiC epilayers
Journal of Crystal Growth·2013· 13 cited
Delay and distortion of slow light pulses by excitons in ZnO
Physical Review B·2011· 28 citedOpen Access
CCDC 789666: Experimental Crystal Structure Determination
The Cambridge Structural Database·2011Open Access
CCDC 728276: Experimental Crystal Structure Determination
The Cambridge Structural Database·2011Open Access
Transient photoluminescence of shallow donor bound excitons in GaN
Physical Review B·2010· 38 citedOpen Access
High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate
2010· 12 cited
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Frequent Co-authors

B. Ḿonemar(22), Erik Janzén(20), Anne Henry(15), Г. Позина(13), Hiroshi Amano(11), Isamu Akasaki(11), T. Paskova(9), Olof Kordina(8), I. A. Buyanova(6), А. А. Торопов(6), T. V. Shubina(6), C. Hallin(6), Ivan G. Ivanov(6), Jawad Ul‐Hassan(6), Nguyên Tiên Són(5), L. Storasta(5), Carl Hemmingsson(4), Weimin Chen(4), T. Malinauskas(4), Fredrik Carlsson(4)