Tsung‐Ming Tsai

National Sun Yat-sen University — Taiwan

Engineering · Physical Sciences

34h-index3.9kcitations193works1.52yr avg
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Research Topics

Advanced Memory and Neural Computing(110), Semiconductor materials and devices(77), Ferroelectric and Negative Capacitance Devices(75), Transition Metal Oxide Nanomaterials(46), Thin-Film Transistor Technologies(45)

Publications193 total

Optoelectronic and Reliability Analysis of OTFTs With Different Bottom Gate Insulators
IEEE Transactions on Electron Devices·2025
Study of Vₜₕ Instability During Recovery After Off-State Stress in p-GaN HEMT
IEEE Electron Device Letters·2025· 1 cited
Analysis of Enhanced Degradation Under Dynamic Negative Bias Temperature Instability (NBTI) Condition in Low-Temperature Polycrystalline Silicon Thin-Film Transistors (LTPS TFTs)
IEEE Transactions on Electron Devices·2025· 1 cited
Forming‐Free ZnO‐Based Resistive Random Access Memory with Supercritical Fluid Hydrogenation Technique
physica status solidi (a)·2024· 2 cited
Enhancing Performance and Reliability of MISGaN HEMT by Advanced Supercritical Fluid Nitridation Technique
2024
A novel SCF H<sub>2</sub>O process increasing Hf02 MOSCAP reliability
2024· 1 cited
The Characteristics and Reliability With Channel Length Dependent on the Deposited Sequence of SiO₂ and Si₃N₄ as PV in LTPS TFTs
IEEE Transactions on Device and Materials Reliability·2024· 4 cited
Utilizing sulfuration of supercritical fluid treatment to improve sensitivity and humidity resistance of chip-type gas sensors
Sensors and Actuators B Chemical·2024· 3 cited
A solid-state semiconductor battery with silica-coated TiO2 core–shell energy storage nanoparticles for rechargeable device application
AIP Advances·2023· 4 citedOpen Access
Utilizing high pressure hydrogen annealing to realize forming free CBRAM
Materials Science and Engineering B·2023· 1 cited
Comparative study on characteristics of GaN-based MIS-HEMTs with Al2O3 and Si3N4 gate insulators under Hot Carrier Degradation
2023· 2 cited
Investigation Between Recover Behavior and Defect With Variation of Light Source in AlGaN/GaN HEMTs After Hot-Carrier Stress
IEEE Electron Device Letters·2023· 8 cited
Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors
Advanced Electronic Materials·2023· 11 citedOpen Access
Performance improvement of Zn0.5Mg0.5O UV sensor by supercritical fluid technology
Materials Science in Semiconductor Processing·2023
Impact of Variant Gate Insulator Fabrication Process on Reliability of Dual-Gate InGaZnO Thin-Film Transistors
IEEE Transactions on Electron Devices·2023· 3 cited
Utilizing Sulfuration of Supercritical Fluid Treatment to Improve Sensitivity and Humidity Resistance of Chip-Type Gas Sensors
SSRN Electronic Journal·2023Open Access
Utilizing Sulfuration of Supercritical Fluid Treatment to Improve Sensitivity and Water Resistance of Chip-Type Gas Sensors
SSRN Electronic Journal·2023Open Access
Performance Improvement by Enhancing Passivation Layer of p-Type GaN High-Electron Mobility Transistors With Supercritical Oxygen Treatment
IEEE Electron Device Letters·2022· 7 cited
Abnormal Subthreshold Swing Decrease in a-InGaZnO Thin-Film Transistor After Self-Heating Stress
IEEE Transactions on Electron Devices·2022· 3 cited
Meridian study on the response current affected by acupuncture needling direction
Medicine·2022· 6 citedOpen Access
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Frequent Co-authors

Ting‐Chang Chang(46), Kuan‐Chang Chang(46), Yong-En Syu(24), Simon M. Sze(24), Min-Chen Chen(23), Tian-Jian Chu(18), Jung‐Hui Chen(18), Chih-Hung Pan(15), Tai-Fa Young(15), Simon M. Sze(14), Hui‐Chun Huang(14), Kai-Huang Chen(14), Yu‐Ting Su(12), Chih‐Cheng Shih(11), Hsin-Lu Chen(10), Jin‐Cheng Zheng(10), Geng-Wei Chang(9), Ya‐Hsiang Tai(9), Jen-Chung Lou(8), Dershin Gan(8)