Simon M. Sze

National Yang Ming Chiao Tung University — Taiwan

Engineering · Physical Sciences

55h-index14.5kcitations332works5.82yr avg
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Research Topics

Semiconductor materials and devices(172), Advanced Memory and Neural Computing(148), Ferroelectric and Negative Capacitance Devices(87), Transition Metal Oxide Nanomaterials(65), Advancements in Semiconductor Devices and Circuit Design(52)

Publications332 total

An Extensive Negative Gate Bias Stress Degradation Mechanism in GaN MIS-HEMTs for Aerospace Applications
IEEE Transactions on Electron Devices·2024· 4 cited
Analysis of Channel-Length Dependence of Residual Hydrogen Diffusion From the Gate Insulator During Oxygen Annealing Treatment in IGZO TFTs
IEEE Electron Device Letters·2024· 12 cited
Impacts of Backside Insulation on the Dynamic On-Resistance of Lateral p-GaN HEMTs-on-Si
arXiv (Cornell University)·2024Open Access
Enhancing Reliability of Short-Channel Dual Gate InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering
IEEE Electron Device Letters·2024· 7 cited
Floating‐Gate Memory
2023· 1 cited
Utilizing high pressure hydrogen annealing to realize forming free CBRAM
Materials Science and Engineering B·2023· 1 cited
Degradation mechanism differences between TiN- and TaN-electrode HZO-based FeRAMs analyzed by current mechanism fitting
Semiconductor Science and Technology·2023· 8 citedOpen Access
Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors
Advanced Electronic Materials·2023· 11 citedOpen Access
Abnormal Threshold Voltage Shift and Sub-channel Generation in Top-Gate InGaZnO TFTs under Backlight Negative Bias Illumination Stress
ACS Applied Electronic Materials·2023· 3 cited
Utilizing Dual-stacked IGZO channel structure to Achieve Optical Memories Application
2022
A Stacked p‐Type Low‐Temperature Polycrystalline Silicon Thin‐Film Transistor for Future Display Applications
Advanced Materials Technologies·2022· 3 cited
Use of a supercritical fluid treatment to improve switching region in resistive random access memory
Applied Physics Express·2022· 2 cited
Radiation hardness of InWZnO thin film as resistive switching layer
Applied Physics Letters·2022· 6 cited
Investigation of deposition technique and thickness effect of HfO2 film in bilayer InWZnO-based conductive bridge random access memory
Vacuum·2022· 5 cited
A Functional Novel Logic for Max/Min Computing in One-Transistor-One-Resistor Devices With Resistive Random Access Memory (RRAM)
IEEE Transactions on Electron Devices·2022· 8 cited
Investigating Selectorless Property within Niobium Devices for Storage Applications
ACS Applied Materials & Interfaces·2022· 18 cited
Degradation Mechanism Differences between Tin- and Tanelectrode Hzo-Based Ferams Analyzed by Current
SSRN Electronic Journal·2022Open Access
Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions
Journal of Materials Chemistry C·2022· 12 cited
Improvement on thermal stability for indium gallium zinc oxide by oxygen vacancy passivation with supercritical fluid cosolvent oxidation
Applied Physics Letters·2021· 10 cited
Increasing Controllable Oxygen Ions to Improve Device Performance Using Supercritical Fluid Technique in ZnO-Based Resistive Random Access Memory
IEEE Transactions on Electron Devices·2021· 3 cited
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Frequent Co-authors

Ting‐Chang Chang(17), Kuan‐Chang Chang(10), Po‐Tsun Liu(10), C.R. Crowell(8), Tsung‐Ming Tsai(7), Yu‐Ting Su(5), Yi Li(5), Xiangshui Miao(5), Yong-En Syu(4), Min-Chen Chen(4), Zhuorui Wang(4), Yao‐Feng Chang(3), Tian-Jian Chu(3), Yaxiong Zhou(3), D. Kahng(2), G. Gibbons(2), D. J. Coleman(2), M.P. Lepselter(2), Ya-Chi Hung(2), Hsin-Lu Chen(2)