P.K. McLarty

University of Maryland, College Park — United States

Engineering · Physical Sciences

18h-index1.6kcitations46works0.02yr avg
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Research Topics

Semiconductor materials and devices(38), Advancements in Semiconductor Devices and Circuit Design(22), Integrated Circuits and Semiconductor Failure Analysis(12), Silicon Carbide Semiconductor Technologies(11), Thin-Film Transistor Technologies(11)

Publications46 total

Correlation of SIMOX processing and device performance by combined DLTS and transistor analysis
2003· 1 cited
Minority carrier generation in very thin silicon on insulator films
2003· 3 cited
Deep traps in very thin SIMOX MOSFET by current DLTS
2003
Edge terminations for SiC high voltage Schottky rectifiers
2002· 42 cited
Low contact resistivity ohmic contacts to 6H-silicon carbide
2002· 12 cited
A new parameter extraction method for ultra-thin oxide SOI MOSFET's
2002· 12 cited
Analysis of gate dielectrics for SiC power UMOSFETS
2002· 8 cited
Modeled tunnel currents for high dielectric constant dielectrics
IEEE Transactions on Electron Devices·1998· 163 cited
Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition
Solid-State Electronics·1997· 1 cited
Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films
IEEE Electron Device Letters·1996· 52 cited
Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition
IEEE Transactions on Electron Devices·1996· 31 cited
Electrical properties of composite gate oxides formed by rapid thermal processing
IEEE Transactions on Electron Devices·1996· 8 cited
On the presence of aluminum in thermally grown oxides on 6H-silicon carbide [power MOSFETs]
IEEE Electron Device Letters·1996· 17 cited
Single-wafer cluster tool performance: an analysis of the effects of redundant chambers and revisitation sequences on throughput
IEEE Transactions on Semiconductor Manufacturing·1996· 158 cited
ectrieal Properties of Composite Gate s Formed by Rapid Thermal Processing
1996
fer Cluster Tool Perfo he Effects of Redu er
1996
Low-pressure rapid thermal chemical vapor deposition of oxynitride gate dielectrics for n-channel and p-channel MOSFETs
IEEE Transactions on Electron Devices·1996· 48 cited
Rapid thermal chemical vapor deposited oxides on N-type 6H-silicon carbide
IEEE Electron Device Letters·1995· 11 cited
Noise Analysis of MOSFET's with Ultra Thin Silicon Oxinitride Films Prepared by Low Pressure Rapid Thermal Chemical Vapor Deposition (LPRTCVD)
European Solid-State Device Research Conference·1995
N-channel and p-channel MOSFETs with oxynitride gate dielectrics formed using low pressure rapid thermal chemical vapor deposition
Microelectronic Engineering·1995· 2 cited
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Frequent Co-authors

J. J. Wortman(16), Veena Misra(15), Dimitris E. Ioannou(10), B. Jayant Baliga(9), Eric M. Vogel(9), W. L. Hill(9), John R. Hauser(7), P. Morfouli(6), T. Ouisse(6), D. Alok(5), S. Cristoloveanu(5), G. Ghibaudo(5), Xiaoli Xu(4), Gari Harris(4), T.L. Perkinson(3), R.S. Gyurcsik(3), W.K. Henson(3), S. Sridevan(3), H.L. Hughes(3), M. Bhatnagar(2)