Hiroshi Kawarada

Waseda University — Japan

Materials Science · Physical Sciences

61h-index12.6kcitations739works1.32yr avg
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Research Topics

Diamond and Carbon-based Materials Research(420), Semiconductor materials and devices(254), Metal and Thin Film Mechanics(132), Advancements in Semiconductor Devices and Circuit Design(100), Electronic and Structural Properties of Oxides(77)

Publications738 total

High power GaN HEMTs unleashed: Epitaxial design and strategies
Materials Science in Semiconductor Processing·2026
Heavily Boron-Doped Source/Drain Layers for Low Contact Resistance and Subthreshold Swing in (001) C–H Diamond MOSFETs
IEEE Electron Device Letters·2026Open Access
DC and RF characteristics of scalable multi-finger 2DHG diamond MOSFETs with a source-via structure
Japanese Journal of Applied Physics·2025
Unveiling GaN HEMT structure–performance relationships: A TCAD-validated framework for physical model selection
Micro and Nanostructures·2025
AuNis modified AlGaN/GaN HEMT biosensor for reliable detection of small Rho GTPases in Jurkat T cell lysate
Scientific Reports·2025Open Access
Fast power switching with cascode diamond MOSFET–SiC MOSFET/GaN HEMT complementary half-bridge inverter
APL Electronic Devices·2025Open Access
First Demonstration of Multi-finger 2DHG Diamond MOSFETs with Source Via Structure
2025
Effects of Regrown Layer Thickness and Nitrogen Concentration on Current Rise at Low Drain Voltage in Vertical Diamond MOSFET
IEEE Transactions on Electron Devices·2025
Impact of Recessed p-GaN Gate and Ohmic Contact Resistance on High-Performance AlGaN/GaN HEMTs: A Simulation Study
2025
Analysis of Electric Field Distribution and Breakdown Voltage in AlGaN/GaN HEMT Structures with Gate Field Plates
2025
Ion-selective membrane-integrated water-gated AlGaN/GaN HEMT for high-stability detection of agricultural herbicides
Results in Physics·2025Open Access
Influence of p-GaN gate airgap in p-GaN AlGaN/GaN HEMTs for improved DC performance
2025Open Access
Bias stability enhancement of metal/Al2O3/AlN/GaN capacitors by high-temperature plasma-enhanced atomic layer deposition of thin AlN interlayer
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2025· 1 cited
Correction: Arshad et al. A Comparative Modelling Study of New Robust Packaging Technology 1 mm2 VCSEL Packages and Their Mechanical Stress Properties. Micromachines 2022, 13, 1513
Micromachines·2025Open Access
Design of Communication Circuits for Underwater Wireless Communication Utilizing Ion Wave
2025
Exceptional reliability and stability AuNis–AlGaN/GaN HEMT sensor for pH detection
Surfaces and Interfaces·2025· 2 cited
Integration of Oxidized Silicon- and Hydrogen- Terminated Diamond p-Channels for Normally-Off High-Voltage Diamond Power Devices
IEEE Electron Device Letters·2025· 4 cited
Advanced potentiometric water-gated configuration using AlGaN/GaN high electron mobility transistor (WGHEMT)
AIP conference proceedings·2025
Largesignal Model for Diamond FET with Trapping Effects Under High-Voltage Operation
2024
L-Band Diamond Amplifier With Multi-Finger Structure
IEEE Electron Device Letters·2024· 2 cited
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Frequent Co-authors

Hitoshi Umezawa(8), Takayuki Iwasaki(6), Yoshihiko Takano(5), M. Tachiki(5), Atsushi Hiraiwa(5), Guofang Zhong(5), Akio Hiraki(5), Iwao Ohdomari(4), Yoshihiro Yokota(4), Masanori Nagao(3), Isao Sakaguchi(3), T. Takenouchi(3), Hidetoshi Tsuboi(3), Tetsuya Yamada(3), Mohd Syamsul(3), Makoto Aoki(3), Kazuyuki Hirama(3), S. Yamauchi(3), Y. Kitabayashi(2), Takuya Kudo(2)