Iwao Ohdomari

Waseda University — Japan

Engineering · Physical Sciences

39h-index5.3kcitations311works0.02yr avg
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Research Topics

Semiconductor materials and devices(111), Integrated Circuits and Semiconductor Failure Analysis(66), Semiconductor materials and interfaces(59), Advancements in Semiconductor Devices and Circuit Design(44), Silicon and Solar Cell Technologies(43)

Publications311 total

Analysis of X-ray diffraction curves of trapezoidal Si nanowires with a strain distribution
Thin Solid Films·2016· 1 cited
Damage Assessment Methodology for Nonstructural Components with Inspection Robot
Key engineering materials·2013· 5 cited
Development of the damage assessment methodology for ceiling elements
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2012· 2 cited
Challenge for STM observation of dopant activation process on Si(001): in‐situ ion irradiation and hydrogenation
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2012
Real-Time Scanning Tunneling Microscopy of Au Ion Irradiation Effects on Si(111) Surface
Hyomen Kagaku·2012Open Access
Significance of Direct Displacement Measurement based Health Monitoring
2012
Structural Monitoring with Inspection Robot
2012
Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors
Applied Physics Letters·2011· 13 cited
Impact of a few dopant positions controlled by single-ion implantation on transconductance of FETs
2011· 1 cited
X-ray diffraction profiles of Si nanowires with trapezoidal cross-sections
Physica B Condensed Matter·2011· 1 cited
Relative-story displacement sensor for measuring five-degree-of-freedom movement of building layers
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2011· 3 cited
Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic Single-Ion Doping
Applied Physics Express·2011· 10 cited
Development of lateral displacement sensor for real‐time detection of structural damage
IEEJ Transactions on Electrical and Electronic Engineering·2011· 23 cited
Molecular Dynamics Simulation on Longitudinal Optical Phonon Mode Decay and Heat Transport in a Silicon Nano-Structure Covered with Oxide Films
Japanese Journal of Applied Physics·2011· 2 cited
152 An Experimental Study on Resolution of 5-DOF Relative-Story Displacement Sensor for Structural Health Monitoring
The Proceedings of the Dynamics & Design Conference·2011
Molecular Dynamics Simulation on Longitudinal Optical Phonon Mode Decay and Heat Transport in a Silicon Nano-Structure Covered with Oxide Films
Japanese Journal of Applied Physics·2011· 6 citedOpen Access
A Relative-Story Displacement Sensor for Structural Health Monitoring Capable of Measuring the Local Inclination Angle and the Relative Displacement
TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series A·2011Open Access
Reliable single atom doping and discrete dopant effects on transistor performance
2010· 2 cited
Measuring Relative-Story Displacement and Local Inclination Angle Using Multiple Position-Sensitive Detectors
Sensors·2010· 31 citedOpen Access
A relative-story displacement sensor resolving the angular error problem
2010· 2 cited
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Frequent Co-authors

Takanobu Watanabe(10), Takashi Tanii(7), Kosuke Tatsumura(6), Takashi Funatsu(6), Hiroshi Kawarada(5), K. Kumamoto(5), K. Kokubun(5), T. Ishimaru(5), Takayuki Hoshino(4), K. N. Tu(4), Takahiro Shinada(3), T. S. Kuan(3), Guo-Jun Zhang(3), Kwang-Soup Song(3), Taro Ueno(3), H. Akatsu(3), K. N. Tu(2), Tadatsugu Hoshino Tadatsugu Hoshino(2), Guofang Zhong(2), K. Honda(2)