C. Blanchard

Université Paris-Saclay — France

Engineering · Physical Sciences

15h-index750citations79works12.02yr avg
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Research Topics

Silicon and Solar Cell Technologies(24), Integrated Circuits and Semiconductor Failure Analysis(16), Advanced Semiconductor Detectors and Materials(14), Ion-surface interactions and analysis(14), Semiconductor materials and devices(11)

Publications79 total

Quantum sensing of acceleration and rotation by interfering magnetically launched atoms
Science Advances·2024· 17 citedOpen Access
Metrology of microwave fields based on trap-loss spectroscopy with cold Rydberg atoms
Physical Review Applied·2024· 7 citedOpen Access
Airborne Absolute Gravimetry With a Quantum Sensor, Comparison With Classical Technologies
Journal of Geophysical Research Solid Earth·2023· 41 citedOpen Access
Il était une voix : roman / Christian Blanchard
2017
Pediocactus nigrispinus discovered in the Tekison Rockshelter Site
ScholarWorks (Central Washington University)·2013
Bibliographie d’Herménégilde Chiasson
Voix et Images·2009
Electrically active defects in irradiated 4H-SiC
Journal of Applied Physics·2004· 96 cited
Damage formation and recovery in temperature helium implanted 4H–SiC
Materials Science and Engineering B·2003· 18 cited
Radiation damage in He implanted silicon at high temperature using multi-energies
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2002· 9 cited
Generation of defects induced by MeV proton implantation in silicon – Influence of nuclear losses
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2002· 5 cited
An IR-reflectivity and X-ray diffraction study of high energy He-ion implantation-induced damage in 4H–SiC
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2002· 29 cited
Cavities in He-Implanted SiC
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2001· 4 cited
Defects in 4H-SiC Induced by High Energy Helium Implantation
MRS Proceedings·2001
Defects in silicon induced by high energy helium implantation and their evolution during anneals
Philosophical Magazine B·2000· 10 cited
Influence of Dislocations onI-V Characteristics of Schottky Diodes Prepared on n-Type 6H-SiC
physica status solidi (b)·2000· 2 cited
Evaluation de la journée "En ville, sans ma voiture ?" : méthodes et questionnaires
HAL (Le Centre pour la Communication Scientifique Directe)·2000Open Access
Proximity gettering of platinum in silicon following implantation with alpha particles at low doses
Materials Science and Engineering B·2000
Study of silver and copper diffusion in p-type Hg 0.3 Cd 0.7 Te and CdTe by capacitance measurements
Materials Science and Engineering B·2000· 23 cited
The evolution of interstitial-type defects in silicon during platinum diffusion from 400 to 600°C following 2-MeV electron irradiation
Materials Science and Engineering B·1999
Stability of proximity gettering of platinum in silicon implanted with alpha particles at low doses
Applied Physics Letters·1999· 6 citedOpen Access
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Frequent Co-authors

J. F. Barbot(18), E. Ntsoenzok(13), D. C. Schmidt(10), J.F. Barbot(9), R. Parrot(8), Alain Deville(8), S. Godey(7), Erwan Oliviero(6), B. Gaillard(6), B. G. Svensson(6), Marie‐Laure David(5), M. F. Beaufort(5), A. Declémy(5), J. C. Desoyer(4), Alessandro Landi(4), Bengt Svensson(3), Nassim Zahzam(3), Alexis Bonnin(3), Malo Cadoret(3), J. Vernois(3)