D. C. Schmidt

Centre National de la Recherche Scientifique — France

Engineering · Physical Sciences

8h-index173citations17works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Silicon and Solar Cell Technologies(16), Integrated Circuits and Semiconductor Failure Analysis(9), Semiconductor materials and devices(7), Ion-surface interactions and analysis(7), Semiconductor materials and interfaces(4)

Publications17 total

Photoluminescence, deep level transient spectroscopy and transmission electron microscopy measurements on MeV self-ion implanted and annealed <i>n</i>-type silicon
Journal of Applied Physics·2000· 48 cited
Proximity gettering of platinum in silicon following implantation with alpha particles at low doses
Materials Science and Engineering B·2000
The evolution of interstitial-type defects in silicon during platinum diffusion from 400 to 600°C following 2-MeV electron irradiation
Materials Science and Engineering B·1999
Stability of proximity gettering of platinum in silicon implanted with alpha particles at low doses
Applied Physics Letters·1999· 6 citedOpen Access
Study on the evolution and nature of interstitial-type defects following proton and alpha particle implantation during low-dose proximity gettering of platinum
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1999· 6 cited
The influence of diffusion temperature and ion dose on proximity gettering of platinum in silicon implanted with alpha particles at low doses
Applied Physics Letters·1999· 19 cited
2 MeV electron irradiation of silicon at elevated temperatures: Influence on platinum diffusion and creation of electrically active defects
Journal of Applied Physics·1999· 11 cited
Sb-enhanced diffusion in strained<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mo>:</mml:mo></mml:math> Dependence on biaxial compression
Physical review. B, Condensed matter·1999· 23 cited
Effect of shallow donors induced by hydrogen on P+N junctions
Materials Science and Engineering B·1999· 3 cited
Low temperature proximity gettering of platinum in proton irradiated silicon via interstitial cluster dissociation
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1999· 8 cited
Residual defects in Cz-silicon after low dose self-implantation and annealing from 400°C to 800°C
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1999· 4 cited
Enhanced diffusion of platinum in electron-irradiated silicon
Materials Science and Engineering B·1999· 8 cited
Proximity gettering of platinum in proton irradiated silicon
Journal of Applied Physics·1998· 21 citedOpen Access
Defect levels of proton-irradiated silicon with a dose of 3.6 × 1013cm−2
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1997· 8 cited
Studies of deep levels in He + -irradiated silicon
Applied Physics A·1997· 8 cited
Thermal Evolution of Rectifier Speed and Deep Levels in Irradiated Silicon
MRS Proceedings·1997
Radiation damage from internal alpha decay in thorium
1971Open Access

Frequent Co-authors

C. Blanchard(13), E. Ntsoenzok(11), B. G. Svensson(8), S. Godey(8), J. F. Barbot(7), J.F. Barbot(7), J. L. Lindström(3), Bengt Svensson(2), P. Desgardin(2), G. Blondiaux(2), M. Seibt(1), C. Jagadish(1), G. Davies(1), Andrej Kuznetsov(1), J. Cardenas(1), B. G. Svensson(1), J. Lundsgaard Hansen(1), A. Nylandsted Larsen(1), N. Keskitalo(1), D. Åberg(1)