Peide D. Ye

Purdue University West Lafayette — United States

Engineering · Physical Sciences

59h-index24.7kcitations436works3.12yr avg
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Research Topics

Semiconductor materials and devices(180), 2D Materials and Applications(111), Advancements in Semiconductor Devices and Circuit Design(97), Ferroelectric and Negative Capacitance Devices(75), Graphene research and applications(61)

Publications436 total

Polar unidirectional magnetotransport in $p-$type tellurene from quantum geometry
ArXiv.org·2026Open Access
Polar unidirectional magnetotransport in $p-$type tellurene from quantum geometry
arXiv (Cornell University)·2026Open Access
Non-reciprocal magnetoresistances in chiral tellurium
Journal of Applied Physics·2026Open Access
Chirality Driven Ratchet Currents in Two-Dimensional Tellurene with an Asymmetric Grating
arXiv (Cornell University)·2026Open Access
Chirality Driven Ratchet Currents in Two-Dimensional Tellurene with an Asymmetric Grating
ArXiv.org·2026Open Access
Breakdown of Ohm's Law by Disorders in Low-Dimensional Transistors
arXiv (Cornell University)·2026Open Access
Breakdown of Ohm's Law by Disorders in Low-Dimensional Transistors
ArXiv.org·2026Open Access
Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators
Advanced Materials·2025Open Access
Gate-Tunable Giant Negative Magnetoresistance in Tellurene Driven by Quantum Geometry
arXiv (Cornell University)·2025Open Access
Engineering Amorphous IGZO Thin-Film Transistors: The Role of Composition and Channel Thickness in Mobility-Threshold Voltage Optimization
ACS Omega·2025Open Access
Enhanced electrical performances with HZO/β-Ga2O3 3D FinFET toward highly perceptual synaptic device application
Materials Science in Semiconductor Processing·2025
Universality of Subthreshold Slope and Defect Characterization in Thin Body Transistors
IEEE Electron Device Letters·2025
Distinguishing the Different Vth Shift Mechanisms in In₂O₃ TFTs Using Ultrafast On-the-Fly Reliability Measurements
IEEE Electron Device Letters·2025· 1 cited
Quantum Geometry and the Electric Magnetochiral Anisotropy in Noncentrosymmetric Polar Media
Physical Review Letters·2025· 1 cited
Advanced characterization of density-of-states over wide bandgap-energy in p-type Cu2O TFTs by multiple-wavelength light source
Applied Physics Letters·2025· 1 cited
Interplay of orbital and spin magnetization in trigonal tellurium
ArXiv.org·2025Open Access
Effects of Gallium on Electron Transport and Bias Stability in Ultrascaled Amorphous InGaO Transistors
IEEE Transactions on Electron Devices·2025· 1 cited
Critical Role of Quantum Confinement on Transfer Length in Achieving High-Performance In<sub>2</sub>O<sub>3</sub> Transistors with Ultra-Scaled Contacted Gate Pitch
2025· 2 cited
Lithography-Defined Semiconductor Moirés with Anomalous In-Gap Quantum Hall States
Nano Letters·2025· 1 citedOpen Access
Analog Multilevel eDRAM-RRAM CIM for Zeroth-Order Fine-tuning of LLMs
2025
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Frequent Co-authors

Mengwei Si(19), Yuchen Du(12), Gang Qiu(12), Xianfan Xu(10), Wenzhuo Wu(9), Han Liu(7), Yixiu Wang(6), Adam T. Neal(5), Zhe Luo(5), Adam Charnas(5), Haiyan Wang(5), Yexin Deng(4), Hong Zhou(4), Lingming Yang(4), Xiao Lyu(4), Sina Najmaei(3), Pulickel M. Ajayan(3), Jun Lou(3), Ruoxing Wang(3), Yi Xuan(3)