Adam Charnas

Engineering · Physical Sciences

24h-index1.7kcitations51works0.32yr avg
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Research Topics

Semiconductor materials and devices(19), ZnO doping and properties(18), Thin-Film Transistor Technologies(16), 2D Materials and Applications(14), Ga2O3 and related materials(10)

Publications51 total

Breakdown of Ohm's Law by Disorders in Low-Dimensional Transistors
arXiv (Cornell University)·2026Open Access
Breakdown of Ohm's Law by Disorders in Low-Dimensional Transistors
ArXiv.org·2026Open Access
Modeling interface roughness scattering with incorporation of potential energy and wave-function fluctuations: Enhancing mobility in AlN/GaN digital alloys
Journal of Applied Physics·2024· 1 citedOpen Access
Mercury-probe measurement of electron mobility in β-Ga<sub>2</sub>O<sub>3</sub> using junction moderated dielectric relaxation
Japanese Journal of Applied Physics·2024
Admittance spectroscopy study of defects in β-Ga2O3
Thin Solid Films·2023· 5 cited
Review—Extremely Thin Amorphous Indium Oxide Transistors
Advanced Materials·2023· 82 citedOpen Access
Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition
IEEE Transactions on Electron Devices·2023· 47 cited
Ultrathin Atomic-Layer-Deposited In<sub>2</sub>O<sub>3</sub> Radio-Frequency Transistors with Record High f<sub>T</sub> of 36 GHz and BEOL Compatibility
2023· 12 cited
Effect of Ga-Doping on Atomic-Layer-Deposited Ultrathin InGaO Thin Film Transistors with BEOL-Compatibility
2023· 4 cited
Ultrathin Indium Oxide Thin-Film Transistors With Gigahertz Operation Frequency
IEEE Transactions on Electron Devices·2022· 13 cited
Ultrathin InGaO Thin Film Transistors by Atomic Layer Deposition
IEEE Electron Device Letters·2022· 61 cited
Reliability of Atomic-Layer-Deposited Gate-All-Around In<sub>2</sub>O<sub>3</sub> Nano-Ribbon Transistors with Ultra-High Drain Currents
2022 International Electron Devices Meeting (IEDM)·2022· 20 cited
First Demonstration of BEOL-Compatible Ultrathin AtomicLayer-Deposited InZnO Transistors with GHz Operation and Record High Bias-Stress Stability
2022 International Electron Devices Meeting (IEDM)·2022· 36 cited
Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current
ACS Nano·2022· 25 cited
Fluorine-passivated In2O3 thin film transistors with improved electrical performance via low-temperature CF4/N2O plasma
Applied Physics Letters·2022· 28 cited
A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current<sub/> <sub/> <sub/>
IEEE Electron Device Letters·2022· 35 cited
Improved Stability With Atomic-Layer-Deposited Encapsulation on Atomic-Layer In<sub>2</sub>O<sub>3</sub> Transistors by Reliability Characterization
IEEE Transactions on Electron Devices·2022· 23 cited
Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions
Journal of Applied Physics·2022· 10 cited
Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure
2022· 1 cited
Vertically stacked multilayer atomic-layer-deposited sub-1-nm In2O3 field-effect transistors with back-end-of-line compatibility
Applied Physics Letters·2022· 10 cited
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Frequent Co-authors

Peide D. Ye(39), Mengwei Si(21), Zehao Lin(19), Zhuocheng Zhang(14), Haiyan Wang(13), Gang Qiu(11), Dongqi Zheng(11), Dmitry Zemlyanov(8), Hongyi Dou(6), Pai-Ying Liao(6), Jie Zhang(5), Zhongxia Shang(5), Xianfan Xu(4), Yaoqiao Hu(4), Xiao Lyu(4), Kyeongjae Cho(4), Jinhyun Noh(4), Jackson Anderson(4), Dana Weinstein(4), P. D. Ye(4)