N. Luther-King

University of Sheffield — United Kingdom

Engineering · Physical Sciences

9h-index165citations19works0.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(19), Advancements in Semiconductor Devices and Circuit Design(9), Semiconductor materials and devices(6), Thin-Film Transistor Technologies(4), Advanced DC-DC Converters(3)

Publications19 total

Performance Evaluation of 3.3-kV Planar CIGBT in the NPT Technology With RTA Anode
IEEE Transactions on Electron Devices·2012· 2 cited
Numerical Evaluation of the Short-Circuit Performance of 3.3-kV CIGBT in Field-Stop Technology
IEEE Transactions on Power Electronics·2011· 16 cited
Clustered Insulated Gate Bipolar Transistor in the Super Junction Concept: The SJ-TCIGBT
IEEE Transactions on Power Electronics·2011· 14 cited
Evaluation of 1.2kV Super Junction trench-gate clustered insulated gate bipolar transistor (SJ-TCIGBT)
2011
Comparison of trench gate IGBT and CIGBT devices for 3.3kV high power module applications
2010· 6 cited
Current Distribution Analysis of IGBT Cells
2009· 1 cited
Comparison of Trench Gate IGBT and CIGBT Devices for Increasing the Power Density From High Power Modules
IEEE Transactions on Power Electronics·2009· 25 cited
Performance of a trench pmos gated, planar, 1.2 kV Clustered insulated gate bipolar transistor in NPT technology
IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs·2009· 9 cited
Experimental Demonstration of 3.3kV Planar CIGBT In NPT Technology
2008· 16 cited
MOS Control Device Concepts for AC–AC Matrix Converter Applications: The HCD Concept for High-Efficiency Anode-Gated Devices
IEEE Transactions on Electron Devices·2005· 10 cited
Analysis and optimisation of the trench gated emitter switched thyristor
Solid-State Electronics·2004
1.7kV NPT V-groove clustered IGBT: fabrication and experimental demonstration
2004· 6 cited
Anode-gated MOS controlled thyristor with ultra-fast switching capability
2004· 5 cited
1.7 kV NPTV-groove clustered IGBT
IEE Proceedings - Circuits Devices and Systems·2004· 2 cited
Progress in MOS-controlled bipolar devices and edge termination technologies
Microelectronics Journal·2003· 7 cited
A novel, 1.2 kV trench clustered IGBT with ultra high performance
2002· 13 cited
A novel, clustered insulated gate bipolar transistor for high power applications
2002· 12 cited
Striped anode engineering: a concept for fast switching power devices
Solid-State Electronics·2002· 17 cited
The 6.5 kV clustered insulated gate bipolar transistor in homogeneous base technology
Solid-State Electronics·2001· 4 cited

Frequent Co-authors

E.M. Sankara Narayanan(17), M. Sweet(17), O. Spulber(10), M.M. De Souza(10), Konstantin Vershinin(9), L. Coulbeck(2), Allan Crane(2), Robert Dudley(2), J. Bruce(2), Shona Ray(2), J.V. Subhas Chandra Bose(2), E.M. Sankara-Narayanan(2), D. Flores(2), José del R. Millán(2), Soon Tat Kong(1), Hong Yao Long(1), K. Verchinine(1), N.A. Moguilnaia(1), C.K. Ngw(1), Subhasis Bose(1)