M.M. De Souza

Universidade Federal do Amazonas — Brazil

Engineering · Physical Sciences

24h-index3.6kcitations197works2.72yr avg
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Research Topics

Semiconductor materials and devices(81), Advancements in Semiconductor Devices and Circuit Design(70), Silicon Carbide Semiconductor Technologies(63), GaN-based semiconductor devices and materials(26), Thin-Film Transistor Technologies(24)

Publications197 total

Improved performance of nitrate extended gate field effect transistor sensor through deposition of polymer layer at various withdrawal speeds using dip coating method
Journal of Electrochemical Science and Engineering·2025Open Access
Nano-ionic Solid Electrolyte FET-Based Reservoir Computing for Efficient Temporal Data Classification and Forecasting
ACS Applied Materials & Interfaces·2025· 2 citedOpen Access
Improving Clarity and Completeness in User Stories: Insights from a Multi-Domain Analysis with Developer Feedback
2025Open Access
Dynamical Characteristics of a Nano-Ionic Solid Electrolyte FET Using an LSTM Model
2024
Recycling of reduced graphene oxide from graphite rods in disposable zinc battery applicable to optical sensing
Ceramics International·2024· 11 cited
Topological Quantum Switching Enabled Neuroelectronic Synaptic Modulators for Brain Computer Interface
Advanced Materials·2024· 5 citedOpen Access
Class BJF⁻¹: Pushing the boundaries of the performance of RF Power Amplifiers.
2024· 1 cited
A delay system reservoir based on a nano-ionic Solid Electrolyte FET<sup>*</sup>
2023
After 75 Years of the Transistor: An Age of Neuromorphic Computing [Women in Electronic Devices]
IEEE Electron Devices Magazine·2023· 1 cited
Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs
Micromachines·2023· 9 citedOpen Access
Reservoir Computing Based on a Solid Electrolyte ZnO TFT: An Attractive Platform for Flexible Edge Computing
2023
Quantum Topological Neuristors for Advanced Neuromorphic Intelligent Systems
Advanced Science·2023· 15 citedOpen Access
Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN
ACS Applied Electronic Materials·2023· 5 citedOpen Access
A novel micro-scaled multi-layered optical stress sensor for force sensing
Journal of Computational Electronics·2023· 2 citedOpen Access
A Solid Electrolyte ZnO Thin Film Transistor for classification of spoken digits using Reservoir Computing
2023· 2 cited
A new back-to-back graded AlGaN barrier for complementary integration technique based on GaN/AlGaN/GaN platform
2023· 2 cited
Carbon nanotubes and graphene: From structural to device properties
Elsevier eBooks·2023
Ease of Matching a Load Line Impedance in a 25 W Contiguous Mode Class BJF<sup>−1</sup> Broadband Amplifier
IEEE Microwave and Wireless Technology Letters·2022· 8 cited
Origins of the Schottky Barrier to a 2DHG in a Au/Ni/GaN/AlGaN/GaN Heterostructure
ACS Applied Electronic Materials·2022· 7 citedOpen Access
Optimization of normally-off <b>β</b>-Ga2O3 MOSFET with high Ion and BFOM: A TCAD study
AIP Advances·2022· 22 citedOpen Access
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Frequent Co-authors

E.M. Sankara Narayanan(17), Ashwani Kumar(6), M. Sweet(6), O. Spulber(6), Premlal Balakrishna Pillai(5), Konstantin Vershinin(5), Richard Cross(4), G. Cao(4), S. Hardikar(4), Asiel N. Corpus‐Mendoza(4), Xiaoyao Song(3), S. K. Manhas(3), Vaithinathan Karthikeyan(3), Vellaisamy A. L. Roy(3), N. Luther-King(3), Paolo Umari(2), Simone Taioli(2), Nagaditya Poluri(2), N.A. Moguilnaia(2), D.A. Hinchley(2)