Hiroyuki Handa

Panasonic (Japan) — Japan

Materials Science · Physical Sciences

18h-index1.1kcitations123works0.82yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Graphene research and applications(56), Silicon Carbide Semiconductor Technologies(26), Nuclear reactor physics and engineering(16), Graphene and Nanomaterials Applications(16), Diamond and Carbon-based Materials Research(15)

Publications123 total

Causes of Leakage Current in Vertical GaN P–N Diode under Reverse Bias
physica status solidi (b)·2025Open Access
Low $R_{\text{ON}}Q_\mathrm{G}$ 1.2 kV-Class Normally-Off GaN Gate Injection Transistor on GaN Substrate with Asymmetric Gate Structure
2025
Causes of Leakage Current in Vertical GaN P–N Diode under Reverse Bias
physica status solidi (b)·2025Open Access
Low R<sub>on</sub>C<sub>rss</sub> Nomally-off Vertical GaN Transistor on GaN Substrate Using p-GaN Shield Structure for High-Power and High-Speed Switching
2024· 3 cited
Relationship between environmental characteristics and migration of Japanese turban snail &lt;b&gt;&lt;i&gt;Turbo cornutus&lt;/i&gt;&lt;/b&gt; on the coast of Niigata, Japan
Japanese journal of benthology·2020· 1 citedOpen Access
Highly-Efficient MHz-class Operation of Boost DC-DC Converters by Using GaN Transistors on GaN with Reduced RonQoss
PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management·2019
Factors affecting the habitat of &lt;i&gt;Haliotis discus discus&lt;/i&gt; on the coast of Sado Island, Niigata, Japan
Japanese journal of benthology·2019Open Access
Characteristics of Isolated DC–DC Converter With Class Phi-2 Inverter Under Various Load Conditions
IEEE Transactions on Power Electronics·2019· 24 cited
Investigation of Peak Voltage Suppression Method at Startup in Isolated DC-DC Converter with Class Phi-2 Inverter
2018· 1 cited
A Study on Load Fluctuation of Isolated DC-DC Converter with Class Phi-2 Inverter using GaN-HFET
2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia)·2018· 3 cited
Vertical GaN-based power devices on bulk GaN substrates for future power switching systems
2018· 3 cited
Fundamental Investigation of Isolated DC-DC Converter with Class-Φ2 Inverter
Journal of the Japan Institute of Power Electronics·2017· 2 cited
High-speed switching and current-collapse-free operation by GaN gate injection transistors with thick GaN buffer on bulk GaN substrates
2016· 26 cited
Deep penetration calculations of neutrons up to 1.5 GeV
2016· 1 cited
A high current operation in a 1.6 kV GaN-based trench hybrid-junction diode (THD)
IEICE Technical Report; IEICE Tech. Rep.·2015· 2 cited
A High Current Operation in a 1.6 kV GaN-based Trenched Junction Barrier Schottky (JBS) Diode
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials·2015· 8 cited
GaN-based Gate Injection Transistors for power switching applications
2014· 14 cited
A 3-Phase AC–AC Matrix Converter GaN Chipset With Drive-by-Microwave Technology
IEEE Journal of the Electron Devices Society·2014· 25 citedOpen Access
3P292 高速原子間力顕微鏡ピエゾドライバの広帯域駆動(26. 計測,ポスター,第52回日本生物物理学会年会(2014年度))
生物物理·2014
An Ultra Compact GaN 3x3 Matrix Converter
ECS Transactions·2014· 1 cited
page 1 of 7Next →

Frequent Co-authors

Maki Suemitsu(31), Hirokazu Fukidome(29), Ryota Takahashi(17), Taiichi Otsuji(14), Kei Imaizumi(13), Tetsuya Suemitsu(13), Shunsuke Abe(11), Y. Miyamoto(8), Akitaka Yoshigoe(8), Yuden Teraoka(8), Eiji Saito(7), Yoshiharu Enta(7), K. Hayashi(7), Masato Kotsugi(6), T. Kinoshita(6), Hyun-Chul Kang(5), Nobuo Sasamoto(5), Yusuke Kawai(4), Shinji Ujita(4), Masahiro Ishida(4)