Maki Suemitsu

Materials Science · Physical Sciences

30h-index3.7kcitations353works0.52yr avg
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Research Topics

Graphene research and applications(127), Semiconductor materials and devices(124), Diamond and Carbon-based Materials Research(53), Silicon Carbide Semiconductor Technologies(50), Silicon Nanostructures and Photoluminescence(45)

Publications353 total

Formation of Alternating Epilayers of 4H-SiC and 3C-SiC by Simultaneous Lateral Epitaxy
Materials science forum·2025· 1 citedOpen Access
Dynamics of Hopping of Surface Trapped Electrons on GaN High Electron Mobility Transistors Observed by Operando X-ray Photoelectron Nanospectroscopy
2024
Effects of annealing temperature on the mechanical, optical, and electrical properties of hydrogenated, nitrogen-doped diamond-like carbon films
Thin Solid Films·2022· 20 cited
Annealing effects on the properties of hydrogenated diamond-like carbon films doped with silicon and nitrogen
Diamond and Related Materials·2022· 9 cited
Effects of silicon doping on the chemical bonding states and properties of nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition
Thin Solid Films·2021· 28 cited
High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications
Nanomaterials·2021· 16 citedOpen Access
Evaluation of Improved Epitaxial Graphitization Process for Realizing High-Performance Graphene Terahertz Lasers
The Japan Society of Applied Physics·2021
Dynamics of surface electron trapping of a GaN-based transistors revealed by spatiotemporally resolved x-ray spectroscopy
Applied Physics Letters·2020· 10 cited
Spectroscopic Study on Ultrafast Carrier Dynamics and Terahertz Amplified Stimulated Emission in Optically Pumped Graphene *
2020
Observation of Amplified Stimulated Terahertz Emission from Optically Pumped Heteroepitaxial Graphene-on-Silicon Materials *
2020
Post-Annealing Effects on the Properties of Nitrogen-Doped DLC Films
The Japan Society of Applied Physics·2020
Annealing effects on the properties of nitrogen doped DLC films
IEICE Technical Report; IEICE Tech. Rep.·2019· 1 cited
Direct Formation of Solution-based Al2O3 on Epitaxial Graphene Surface for Sensor Applications
Sensors and Materials·2019· 2 citedOpen Access
Modulation of Electronic States near Electrodes in Graphene Transistors Observed by Operando Photoelectron Nanospectroscopy
Sensors and Materials·2019· 1 citedOpen Access
Influence of interface dipole layers on the performance of graphene field effect transistors
Carbon·2019· 25 citedOpen Access
Graphene-based 2D-heterostructures for terahertz lasers and amplifiers
2019· 1 cited
Summary of Panel Discussions
The Japan Society of Applied Physics·2019
Element‐ and Site‐Specific Many‐Body Interactions in Few‐Layer MoS<sub>2</sub> During X‐Ray Absorption Processes
physica status solidi (a)·2018· 7 cited
Thermal stability of silicon and nitrogen doped DLC thin films
IEICE Technical Report; IEICE Tech. Rep.·2018
Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy
Scientific Reports·2018· 14 citedOpen Access
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Frequent Co-authors

Hirokazu Fukidome(22), Hiroyuki Handa(10), Yoshiharu Enta(9), Nobuo Miyamoto(9), Hideki Nakazawa(8), Taiichi Otsuji(7), Akira Satou(4), Eiichi Sano(4), V. Ryzhii(4), Y. Miyamoto(4), Masato Kotsugi(4), T. Kinoshita(4), Fumihiko Hirose(4), Shunsuke Abe(4), Ryota Takahashi(4), Kei Imaizumi(4), Akitaka Yoshigoe(4), Yuden Teraoka(4), Tetsuya Suemitsu(4), Keiichiro Tashima(3)