D. Scott

Northrop Grumman (United States) — United States

Engineering · Physical Sciences

17h-index970citations88works0.02yr avg
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Research Topics

Radio Frequency Integrated Circuit Design(52), Semiconductor Quantum Structures and Devices(34), Photonic and Optical Devices(20), Advancements in Semiconductor Devices and Circuit Design(17), Microwave Engineering and Waveguides(16)

Publications87 total

Heterogeneously Integrated V-Band Amplifier
2018· 2 cited
(Invited) Diverse Accessible Heterogeneous Integration (DAHI) Foundry at Northrop Grumman Aerospace Systems (NGAS)
ECS Meeting Abstracts·2017
(Invited) Diverse Accessible Heterogeneous Integration (DAHI) Foundry at Northrop Grumman Aerospace Systems (NGAS)
ECS Transactions·2017· 2 cited
Heterogeneously Integrated W-Band Downconverter
IEEE Microwave and Wireless Components Letters·2017· 6 cited
A Meeting of Materials: Integrating Diverse Semiconductor Technologies for Improved Performance at Lower Cost
IEEE Microwave Magazine·2017· 20 cited
(Invited) Diverse Accessible Heterogeneous Integration (DAHI) Foundry at Northrop Grumman Aerospace Systems (NGAS)
ECS Meeting Abstracts·2016
Sub-millimeter wave InP technologies and integration techniques
2015· 22 cited
InP HBT transferred substrate amplifiers operating to 600 GHz
2015· 18 cited
220-GHz High-Efficiency InP HBT Power Amplifiers
IEEE Transactions on Microwave Theory and Techniques·2014· 32 cited
Diverse Accessible Heterogeneous Integration (DAHI) at Northrop Grumman Aerospace Systems (NGAS)
2014· 15 cited
50 mW 220 GHz InP HBT power amplifier MMIC
2014· 14 cited
(Invited) Advanced Heterogeneous Integration of InP HBT and CMOS/SiGeBiCMOS Technologies
ECS Transactions·2013
Indium Phosphide Heterojunction Bipolar Transistors with Emitter Regrowth by Molecular Beam Epitaxy
2013
InP HBT/Si CMOS-Based 13-Bit 1.33Gsps Digital-to-Analog Converter with >70 dB SFDR
2012· 7 cited
Advanced Heterogeneous Integration of InP HBT and CMOS/SiGeBiCMOS Technologies
ECS Meeting Abstracts·2012Open Access
InP HBT Transferred to Higher Thermal Conductivity Substrate
IEEE Electron Device Letters·2012· 19 cited
235 GHz Amplifier Using 150 nm InP HBT High Power Density Transistor
IEEE Microwave and Wireless Components Letters·2011· 16 cited
Advanced Heterogeneous Integration of InP HBT and CMOS Si Technologies
2010· 21 cited
Demonstration of a linear ultra-compact integrated coherent receiver
2010· 6 cited
A 0.25 $\mu$m InP DHBT 200 GHz+ Static Frequency Divider
IEEE Journal of Solid-State Circuits·2010· 19 cited
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Frequent Co-authors

M.J.W. Rodwell(24), Miguel Urteaga(19), A. Gutierrez-Aitken(15), S. Krishnan(14), C. Monier(13), T. Mathew(11), B. Oyama(11), S. Jaganathan(10), V. Radisic(10), A.K. Oki(10), Yu-Lian Wei(10), A. Cavus(9), E. Kaneshiro(9), Yun Wei(8), N. Parthasarathy(8), Y. Betser(7), Zach Griffith(7), D. Mensa(6), S.I. Long(6), M. Dahlstrǒm(6)