P. H. Citrin

Physics and Astronomy · Physical Sciences

40h-index7.8kcitations105works0.02yr avg
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Research Topics

Advanced Chemical Physics Studies(39), Electron and X-Ray Spectroscopy Techniques(31), Surface and Thin Film Phenomena(23), Semiconductor materials and devices(19), Silicon Nanostructures and Photoluminescence(18)

Publications105 total

A new class of defects in highly n-doped silicon
Physica B Condensed Matter·2003· 4 cited
Evidence for a New Class of Defects in Highly<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Doped Si: Donor-Pair-Vacancy-Interstitial Complexes
Physical Review Letters·2003· 33 cited
Local structure and bonding of luminescent Er in GaN: a contrast with Er in Si
2002· 1 cited
Imaging Single Dopant Atoms and Nanoclusters in Highly n-type Bulk Si
Microscopy and Microanalysis·2002Open Access
Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si
Nature·2002· 433 cited
Visible and near-infrared electroluminescence of Er-doped GaN grown by molecular beam epitaxy
APS March Meeting Abstracts·2002
Erbium in Si and GaN: extended versus point defects
Physica B Condensed Matter·2001· 5 cited
Local structure and bonding of Er in GaN: A contrast with Er in Si
Applied Physics Letters·2000· 57 cited
Breaking through the electrical saturation barrier: 2D- versus 3D-doping in n-type silicon
Physica B Condensed Matter·1999· 6 cited
Geometric Frustration of 2D Dopants in Silicon: Surpassing Electrical Saturation
Physical Review Letters·1999· 29 cited
Atomic-Scale Imaging of Dopant Atom Distributions Within Silicon δ-Doped Layers
MRS Proceedings·1999· 1 cited
Vacancy-induced structural relaxations in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Yb</mml:mi></mml:mrow><mml:mrow><mml:mn>2.75</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">C</mml:mi></mml:mrow><mml:mrow><mml:mn>60</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
Physical review. B, Condensed matter·1998· 5 cited
Erratum: Fermi-Level-Pinning Defects in Highly<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="italic">n</mml:mi></mml:math>-Doped Silicon [Phys. Rev. Lett. 79, 4834 (1997)]
Physical Review Letters·1998Open Access
Fundamental Limit of Free-Carrier Densities in n-doped Si
APS March Meeting Abstracts·1998
Characterizing Trace Metal Impurities in Optical Waveguide Materials Using X-Ray Absorption
MRS Proceedings·1998· 1 cited
Fermi-Level-Pinning Defects in Highly<i>n</i>-Doped Silicon
Physical Review Letters·1997· 101 cited
Distorted and inequivalently charged<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">C</mml:mi></mml:mrow><mml:mrow><mml:mn>60</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>anions in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Yb</mml:mi></mml:mrow><mml:mrow><mml:mn>2.75</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">C</mml:mi></mml:mrow><mml:mrow><mml:mn>60</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
Physical review. B, Condensed matter·1997· 23 cited
Local structural study of Pb-induced instability in ZBLAN glass
Journal of Non-Crystalline Solids·1997· 2 cited
Divalent Yb Cations and Distorted, Inequivalently-Charged C_60 Anions in Yb_2.75C_60
APS·1997
Structural Energetics of Yb_2.75C_60: Charge Transfer and Local Distortions
APS·1997
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Frequent Co-authors

G. K. Wertheim(17), D. M. Riffe(10), J. E. Rowe(10), P. Eisenberger(8), S. Schuppler(6), Matthew A. Marcus(6), David Adler(6), F. Comin(5), Ya Xie(4), T.D. Harris(4), F. Sette(4), David A. Muller(3), H.‐J. Gossmann(3), Scott L. Friedman(3), Louis E. Brus(3), E. E. Chaban(3), R. C. Hewitt(3), T. Hashizume(3), Alastair A. MacDowell(3), Paul Northrup(3)