Sébastien Frégonèse

Centre National de la Recherche Scientifique — France

Engineering · Physical Sciences

19h-index1.6kcitations263works1.82yr avg
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Research Topics

Radio Frequency Integrated Circuit Design(126), Advancements in Semiconductor Devices and Circuit Design(122), Microwave and Dielectric Measurement Techniques(35), Semiconductor Quantum Structures and Devices(32), Microwave Engineering and Waveguides(30)

Publications263 total

Analysis of the 16-Term Error Model Coefficients: Evaluating Measurement Setup Leakages and Their Impact on Transistor Characterization up to 325 GHz
IEEE Transactions on Microwave Theory and Techniques·2026
Error Term Analysis in 16-Term Calibration: Enhancing SiGe HBT S-Parameter Accuracy up to 330 GHz
2025Open Access
Investigating Substrate Network Effects on Si/SiGe HBT Performance Up to 500 GHz
IEEE Transactions on Electron Devices·2025Open Access
Recent progress in bipolar and heterojunction bipolar transistors on SOI
Solid-State Electronics·2025Open Access
Integration of Lateral Si/SiGe HBTs on Advanced FD-SOI Technology: Process Development and Challenges
2025Open Access
Comparaison des Modèles de Calibrage pour l'Extraction Précise des Performances RF d'un Transistor HBT SiGe en haute fréquence
SPIRE - Sciences Po Institutional REpository·2024
A Versatile 55-nm SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications
2024· 8 cited
On the Safe Operating Area of InP HBTs
2024· 1 cited
WM-02 Mechanical Investigations for High Frequency Probe Design
SPIRE - Sciences Po Institutional REpository·2024
Establishing On-Wafer Calibration Standards for the 16-Term Error Model: Application to Silicon High-Frequency Transistor Characterization
IEEE Journal of Microwaves·2024· 11 citedOpen Access
Sonde haute fréquence avec couplage réduit pour la mesure on-wafer
SPIRE - Sciences Po Institutional REpository·2024Open Access
Next Generation SiGe HBTs for Energy Efficient Microwave Power Amplification (Invited)
2024· 1 citedOpen Access
What causes the fluctuations in fmax with respect to frequency?
SPIRE - Sciences Po Institutional REpository·2023Open Access
Electro-Thermal Investigation of SiGe HBTs: A Review
2023Open Access
Exploring Compact Modeling of SiGe HBTs in Sub-THz Range With HICUM
IEEE Transactions on Electron Devices·2023· 5 citedOpen Access
A TCAD-Based Analysis of Substrate Bias Effect on Asymmetric Lateral SiGe HBT for THz Applications
IEEE Transactions on Electron Devices·2023· 5 citedOpen Access
SiGe-based Nanowire HBT for THz Applications
2023· 1 cited
Study on Measurement Discontinuity during On-wafer TRL Calibration of 28FD-SOI Devices upto 110GHz
2023· 1 citedOpen Access
Optimizing Finger Spacing in Multifinger Bipolar Transistors for Minimal Electrothermal Coupling
IEEE Transactions on Electron Devices·2022· 5 citedOpen Access
BEOL Thermal Resistance Extraction in SiGe HBTs
IEEE Transactions on Electron Devices·2022· 2 citedOpen Access
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Frequent Co-authors

Thomas Zimmer(42), Cristell Maneux(18), Marina Deng(13), Magali De Matos(10), Rosario D’Esposito(9), Anjan Chakravorty(7), Chandan Yadav(6), C. Raya(6), Bertrand Ardouin(6), C. Mukherjee(6), Didier Céli(6), P. Chevalier(5), H. Happy(5), Suresh Balanethiram(5), Jorge‐Daniel Aguirre‐Morales(4), Thomas Zimmer(3), Bernard Plano(3), Klaus Aufinger(3), M. Schröter(3), Marco Cabbia(3)