Steffen Schildberg

Engineering · Physical Sciences

4h-index129citations6works0.02yr avg
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Research Topics

Semiconductor materials and devices(6), Semiconductor Quantum Structures and Devices(5), Advancements in Semiconductor Devices and Circuit Design(4), Advanced Semiconductor Detectors and Materials(1), Advanced Materials Characterization Techniques(1)

Publications6 total

Breakdown mechanisms in the on-state mode of operation of InAlAs/In/sub x/Ga/sub 1-x/As pseudomorphic HEMTs
2002· 2 cited
Breakdown Mechanisms in Pseudomorphic InAlAs/In<sub>x</sub>Ga<sub>1-x</sub>As High Electron Mobility Transistors on InP. II: On-State
Japanese Journal of Applied Physics·1995· 19 cited
Breakdown Mechanisms in Pseudomorphic InAlAs/In<sub>x</sub>Ga<sub>1-x</sub>As High Electron Mobility Transistors on InP. I: Off-State
Japanese Journal of Applied Physics·1995· 20 cited
Off-state breakdown in InAlAs/InGaAs MODFET's
IEEE Transactions on Electron Devices·1995· 82 cited
Analytical Model to Determine the Gate Leakage Current in In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>x</sub>Ga<sub>1-x</sub>As Pseudomorphic Modulation Doped Field-Effect Transistors Caused by Thermionic Field Emission
Japanese Journal of Applied Physics·1994· 5 cited
Physics of breakdown in InAlAs/InGaAs MODFET's
IEEE Transactions on Electron Devices·1993· 1 cited

Frequent Co-authors

Jürgen Dickmann(6), B. E. Maile(3), A. Schurr(3), A. Geyer(3), P. Narozny(3), S.R. Bahl(2), Jesús A. del Alamo(2), K. Riepe(2), Heinrich Daembkes(1), Hans-Joachim Fittng(1), Peter Ellrod(1), Franz Joseph Tegude(1), S. Heuthe(1)