B. E. Maile

University of Stuttgart — Germany

Physics and Astronomy · Physical Sciences

13h-index525citations34works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(27), Advancements in Semiconductor Devices and Circuit Design(13), Semiconductor materials and devices(11), Quantum and electron transport phenomena(9), Semiconductor Lasers and Optical Devices(5)

Publications34 total

Fabrication and optical spectroscopy of ultra small III–V compound semiconductor structures
Advances in Solid State Physics·2007· 23 cited
MBE growth of lattice matched HFETs on InP: material quality and reproducibility
2002
W-band MMIC amplifiers based on quarter micron gate-length InP HEMTs and coplanar waveguides
2002
Active circulator MMIC in CPW technology using quarter micron InAlAs/InGaAs/InP HFETs
2002· 13 cited
Breakdown mechanisms in the on-state mode of operation of InAlAs/In/sub x/Ga/sub 1-x/As pseudomorphic HEMTs
2002· 2 cited
Impact of proximity correction on device yield in electron-beam definition of MSM-detectors
Microelectronic Engineering·1996· 1 cited
In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>x</sub>Ga<sub>1-x</sub>As (0.53&lt;x&lt;1.0) Pseudomorphic High Electron Mobility Transistors with High Breakdown Voltages: Design and Performances
Japanese Journal of Applied Physics·1996· 8 cited
Breakdown Mechanisms in Pseudomorphic InAlAs/In<sub>x</sub>Ga<sub>1-x</sub>As High Electron Mobility Transistors on InP. II: On-State
Japanese Journal of Applied Physics·1995· 19 cited
Breakdown Mechanisms in Pseudomorphic InAlAs/In<sub>x</sub>Ga<sub>1-x</sub>As High Electron Mobility Transistors on InP. I: Off-State
Japanese Journal of Applied Physics·1995· 20 cited
Quasi one-dimensional in-plane-gate field-effect-transistor
Solid-State Electronics·1994· 9 cited
Fabrication limits of nanometer T and Γ gates: Theory and experiment
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1993· 11 cited
InP based high gain Ka-band three stage coplanar waveguide monolithic amplifier
1993· 1 cited
High gain 28GHz coplanar waveguide monolithic amplifier on InP substrate
Electronics Letters·1993· 4 cited
Carrier relaxation in intermixed GaAs/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>As quantum wires
Physical review. B, Condensed matter·1993· 22 cited
Novel fabrication process for Si <sub>2</sub> N <sub>4</sub> passivated InAlAs/UnGaAs/InP HFETS
Electronics Letters·1992· 15 cited
The In-Plane-Gate Transistor: Device Simulation and Design of the IPG
1992· 1 cited
Transport and optical properties of semiconductor quantum wires
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1991· 24 cited
Lateral quantization induced emission energy shift of buried GaAs/AlGaAs quantum wires
Applied Physics Letters·1990· 33 cited
Erratum: Fabrication and optical characterization of quantum wires from semiconductor materials with varying In content [J. Vac. Sci. Technol. B <b>7</b>, 2030 (1989)]
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena·1990· 1 cited
Time-resolved investigations of sidewall recombination in dry-etched GaAs wires
Applied Physics Letters·1990· 58 cited
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Frequent Co-authors

A. Forchel(18), R. Germann(14), H. Leier(10), Jürgen Dickmann(9), G. V. Mayer(7), H. P. Meier(6), A. Schurr(6), A. Geyer(6), K. Riepe(5), Detlev Grützmacher(4), P. Narozny(4), T. Hackbarth(4), A. Menschig(3), G. Weimann(3), Steffen Schildberg(3), H. Haspeklo(3), Michael C. Berg(3), S. Koßlowski(3), C. Wölk(3), G. Weimann(2)