H. Schaber

Siemens (Germany) — Germany

Materials Science · Physical Sciences

12h-index540citations29works0.02yr avg
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Research Topics

Silicon Nanostructures and Photoluminescence(15), Semiconductor materials and interfaces(14), Silicon and Solar Cell Technologies(12), Thin-Film Transistor Technologies(11), Semiconductor materials and devices(7)

Publications29 total

Technology and physics of polysilicon emitters
2003· 8 cited
IIA-2 Base Thickness and High-Frequency Perfor-
1993
WSi2 and CoSi2 as diffusion sources for shallow-junction formation in silicon
Journal of Applied Physics·1991· 58 cited
Metal-dopant-compound formation in TiSi2 and TaSi2: Impact on dopant diffusion and contact resistance
Journal of Applied Physics·1991· 48 cited
Application of Polysilicon in Advanced IC - Technologies
MRS Proceedings·1990
Comparison between CoSi2 and TiSi2 as dopant source for shallow silicided junction formation
Applied Surface Science·1989· 32 cited
A 1- mu m polysilicon self-aligning bipolar process for low-power high-speed integrated circuits
IEEE Electron Device Letters·1989· 25 cited
NONSELECTIVE W/WSi<sub>x</sub> -CVD TECHNOLOGY FOR LOW RESISTANCE VIA PLUGS ON ALUMINUM
Le Journal de Physique Colloques·1988Open Access
SHALLOW DOPING PROFILES FOR HIGH-SPEED BIPOLAR TRANSISTORS
Le Journal de Physique Colloques·1988· 8 citedOpen Access
Nonselective W/WSi x -CVD Technology for Low Resistance via Plugs on Aluminum
Springer Link (Chiba Institute of Technology)·1988
ChemInform Abstract: Analysis of Polysilicon Diffusion Sources.
ChemInform·1988· 1 cited
Limitations of TiSi2 as a source for dopant diffusion
Applied Physics Letters·1988· 62 cited
Analysis of Polysilicon Diffusion Sources
Journal of The Electrochemical Society·1988· 54 cited
Vertical Scaling Considerations for Polysilicon-Emitter Bipolar Transistors
Springer series in electrophysics·1988· 12 cited
The role of the interfacial layer in bipolar (poly-Si)-emitter transistors
Solid-State Electronics·1987· 14 cited
Shallow Junction Formation using CoSi 2 as a Diffusion Source
European Solid-State Device Research Conference·1987· 3 cited
Double Self Aligned Bipolar Transistors using Salicide Contacts
1987· 5 cited
Session 15 Device technology &amp;#8212; CMOS and BIPOLAR process integration
1987
Process and device related scaling considerations for polysilicon emitter bipolar transistors
1987· 17 cited
Session 29 Device technology &amp;#8212; Thin dielectrics
1986
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Frequent Co-authors

V. Probst(8), T.F. Meister(8), H. Kabza(6), Luc Van den hove(5), Krista A. Ehinger(5), I. Weitzel(4), Karen Maex(4), H. Oppolzer(4), D. Cutter(4), B. Benna(4), R. De Keersmaecker(3), J. Bieger(3), Pierre‐Emmanuel Lippens(2), A. Mitwalsky(2), J. Binder(2), Ε. Obermeier(2), M. Miura–Mattausch(2), Michael Reisch(2), J. Weng(2), L. Treitinger(2)