Arthur H. Edwards

Sandia National Laboratories — United States

Engineering · Physical Sciences

23h-index2.2kcitations96works0.02yr avg
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Research Topics

Semiconductor materials and devices(37), Phase-change materials and chalcogenides(18), Glass properties and applications(16), Advanced Memory and Neural Computing(14), Silicon and Solar Cell Technologies(13)

Publications95 total

Theory of magnetic <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>3</mml:mn><mml:mi>d</mml:mi></mml:mrow></mml:math> transition metal dopants in gallium nitride
Physical review. B./Physical review. B·2023· 10 citedOpen Access
Electronic structure of intrinsic defects in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>c</mml:mi></mml:math>-gallium nitride: Density functional theory study without the jellium approximation
Physical review. B./Physical review. B·2022· 4 citedOpen Access
Theoretical study of intrinsic defects in cubic silicon carbide <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>3</mml:mn><mml:mi>C</mml:mi></mml:mrow></mml:math>-SiC
Physical review. B./Physical review. B·2021· 23 citedOpen Access
Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels
Journal of Applied Physics·2018· 8 citedOpen Access
On the energy consequences of information for spacecraft systems
2017Open Access
Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors
IEEE Transactions on Nuclear Science·2016· 12 cited
A Study of Gamma-Ray Exposure of Cu–SiO$_2$ Programmable Metallization Cells
IEEE Transactions on Nuclear Science·2015· 26 cited
Reconfigurable Memristive Device Technologies
Proceedings of the IEEE·2015· 78 cited
Analytical Relationship between Anion Formation and Carrier-Trap Statistics in Chalcogenide Glass Films
ECS Electrochemistry Letters·2015· 16 citedOpen Access
An Introduction to Reconfigurable Systems
Proceedings of the IEEE·2015· 63 cited
Static impedance behavior of programmable metallization cells
Solid-State Electronics·2015· 23 cited
Interface effects on calculated defect levels for oxide defects
Bulletin of the American Physical Society·2014
Relating the defect band gap and the density functional band gap
Bulletin of the American Physical Society·2014
Modeling charged defects inside density functional theory band gaps
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2014· 16 cited
Cyber Security Considerations for Reconfigurable Systems
Advances in information security·2014
Interface Effects on Total Energy Calculations for Radiation-Induced Defects
IEEE Transactions on Nuclear Science·2013
Memristors and the Future of Cyber Security Hardware
Advances in information security·2013
Computational intelligence and neuromorphic computing potential for cybersecurity applications
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2013· 4 cited
Finite Element Modeling of Ag Transport and Reactions in Chalcogenide Glass Resistive Memory
Bulletin of the American Physical Society·2013
Finite element modeling of ag transport and reactions in chalcogenide glass resistive memory
2013· 5 cited
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Frequent Co-authors

Peter A. Schultz(9), W. Beall Fowler(9), Harold P. Hjalmarson(6), Hugh Barnaby(6), Michael N. Kozicki(6), Andrew C. Pineda(4), Peter V. Sushko(4), Renée M. Van Ginhoven(4), Robert E. Stahlbush(3), Alexander L. Shluger(3), Y. Gonzalez-Velo(3), Marcus G. Martin(2), Aidan P. Thompson(2), В. Б. Сулимов(2), Kristy A. Campbell(2), Sanghamitra Mukhopadhyay(2), Edward H. Poindexter(2), W. L. Warren(2), R.D. Pugh(2), Wenhao Chen(2)