Renée M. Van Ginhoven

Sandia National Laboratories — United States

Engineering · Physical Sciences

16h-index992citations44works0.02yr avg
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Research Topics

Semiconductor materials and devices(12), Glass properties and applications(8), Luminescence Properties of Advanced Materials(7), Radiation Detection and Scintillator Technologies(7), Silicon Carbide Semiconductor Technologies(6)

Publications44 total

Theory of magnetic <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>3</mml:mn><mml:mi>d</mml:mi></mml:mrow></mml:math> transition metal dopants in gallium nitride
Physical review. B./Physical review. B·2023· 10 citedOpen Access
Review on energy storage in lead‐free ferroelectric films
Energy Storage·2022· 36 citedOpen Access
Surface Functionalized Barium Titanate Nanoparticles: A Combined Experimental and Computational Study
ECS Journal of Solid State Science and Technology·2022· 8 citedOpen Access
Enhanced energy storage properties of epitaxial (Ba<sub>0.</sub><scp><sub>955</sub>Ca<sub>0</sub></scp><sub>.045</sub>)(Zr<sub>0.</sub><scp><sub>17</sub>Ti<sub>0</sub></scp><sub>.83</sub>)<scp>O<sub>3</sub></scp> ferroelectric thin films
Energy Storage·2022· 7 cited
Theoretical study of intrinsic defects in cubic silicon carbide <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>3</mml:mn><mml:mi>C</mml:mi></mml:mrow></mml:math>-SiC
Physical review. B./Physical review. B·2021· 23 citedOpen Access
Computational study of first-row transition metals in monodoped 4H-SiC
Modelling and Simulation in Materials Science and Engineering·2021· 6 cited
Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels
Journal of Applied Physics·2018· 8 citedOpen Access
Atomistic Simulation of Si/SiO2 Interfaces.
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2016Open Access
Epitaxial Fe/Y2O3 interfaces as a model system for oxide-dispersion-strengthened ferritic alloys
Journal of Nuclear Materials·2014· 12 citedOpen Access
Thermodynamic and kinetic properties of intrinsic defects and Mg transmutants in 3C–SiC determined by density functional theory
Journal of Nuclear Materials·2014· 19 cited
Monte Carlo simulation of gamma-ray response of BaF2 and CaF2
Journal of Applied Physics·2013· 22 cited
Off-center Tl and Na dopant centers in CsI
Journal of Physics Condensed Matter·2013· 7 cited
Defect structure of epitaxial CrxV1−x thin films on MgO(001)
Thin Solid Films·2013· 9 cited
FIRST-PRINCIPLES CALCULATIONS OF INTRINSIC DEFECTS AND Mg TRANSMUTANTS IN 3C-SiC
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2013
Formation, stability, and mobility of self-trapped excitations in NaI and NaI<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>Tl<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mi>x</mml:mi></mml:msub></mml:math>from first principles
Physical Review B·2013· 24 cited
Defect and Dopant Properties in CsI and NaI.
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2012Open Access
Chemical and Charge Imbalance Induced by Radionuclide Decay: Effects on Waste Form Structure
2012· 2 citedOpen Access
Superlattice Structure and Precipitates in O<sup>+</sup> and Zr<sup>+</sup> Ion Coimplanted SrTiO<sub>3</sub>: A Model Waste Form for <sup>90</sup>Sr
The Journal of Physical Chemistry C·2012· 6 cited
Defect level distributions and atomic relaxations induced by charge trapping in amorphous silica
Applied Physics Letters·2012· 33 cited
Charge trap distributions and correlated atomic relaxations in amorphous silica.
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2012
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Frequent Co-authors

Peter A. Schultz(12), L. René Corrales(9), Hannes Jónsson(7), Weilin Jiang(7), Harold P. Hjalmarson(6), Alejandro Strachan(4), Arthur H. Edwards(4), Charles H. Henager(4), Richard J. Kurtz(4), John E. Jaffe(4), Nathan Anderson(3), Ravi Pramod Vedula(3), Micah P. Prange(3), Byeongwon Park(3), Bradley R. Johnson(3), Brian J. Riley(3), S. K. Sundaram(3), Jarrod V. Crum(3), V. Shutthanandan(3), Carolyn E. Seifert(3)