J.L. Roehl

University of Toledo — United States

Physics and Astronomy · Physical Sciences

8h-index180citations13works0.02yr avg
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Research Topics

Advanced Chemical Physics Studies(5), Chalcogenide Semiconductor Thin Films(5), Superconductivity in MgB2 and Alloys(4), Physics of Superconductivity and Magnetism(2), Quantum Dots Synthesis And Properties(2)

Publications13 total

Diffusion of Te vacancy and interstitials of Te, Cl, O, S, P and Sb in CdTe: A density functional theory study
Solar Energy Materials and Solar Cells·2014· 11 cited
An ab initio computational study of pure Zn3N2 and its native point defects and dopants Cu, Ag and Au
Thin Solid Films·2014· 32 cited
Diffusion in CdS of Cd and S vacancies and Cu, Cd, Cl, S and Te interstitials studied with first-principles computations
Materials Research Express·2014· 13 cited
Structural, energetic and elastic properties of Cu2ZnSn(SxSe1−x)4 (x=1, 0.75, 0.5, 0.25, 0) alloys from first-principles computations
Solar Energy·2014· 42 cited
Diffusion of Cd vacancy and interstitials of Cd, Cu, Ag, Au and Mo in CdTe: A first principles investigation
Solar Energy·2014· 30 cited
A Theoretical Study of Bulk and Surface Diffusion Processes for Semiconductor Materials Using First Principles Calculations
OhioLink ETD Center (Ohio Library and Information Network)·2014Open Access
Study of B1 (NaCl-type) to B2 (CsCl-type) pressure-induced structural phase transition in BaS, BaSe and BaTe using first-principles computations
Bulletin of the American Physical Society·2013
Study of B1 (NaCl-type) to B2 (CsCl-type) pressure-induced structural phase transition in BaS, BaSe and BaTe using<i>ab initio</i>computations
Journal of Physics Condensed Matter·2013· 12 cited
Diffusion of a Ga adatom on the GaAs(001)‐c(4×4)‐heterodimer surface: A first principles study
Surface Science·2012· 13 cited
Diffusion of a Ga adatom on the GaAs(001)-\emph{c}(4 $\times$ 4)-heterodimer surface: A first-principles study
Bulletin of the American Physical Society·2012
Binding sites and diffusion barriers of a Ga adatom on the $\textrm{GaAs(001)-\emph{c}(}\textbf{4}\times\textbf{4}\textrm{)}$ surface from first-principles computations
Bulletin of the American Physical Society·2011
Binding sites and diffusion barriers of a Ga adatom on the GaAs(001)-c(4 × 4) surface from first-principles computations
APS March Meeting Abstracts·2011
Binding sites and diffusion barriers of a Ga adatom on the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mtext>GaAs</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>001</mml:mn></mml:mrow><mml:mo>)</mml:mo></mml:mrow><mml:mtext>−</mml:mtext><mml:mi>c</mml:mi><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>4</mml:mn><mml:mo>×</mml:mo><mml:mn>4</mml:mn></mml:mrow><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>surface from first-principles computations
Physical Review B·2010· 27 cited

Frequent Co-authors

S. V. Khare(12), R. J. Phaneuf(4), A. Kolagatla(3), V. K. K. Ganguri(3), Sandeep Aravelli(2), Xiuquan Zhou(2), Cora Lind(2), Purnaansh Prakash Gunaicha(1), Srikanth Gangam(1), Nanke Jiang(1), Daniel G. Georgiev(1), Ahalapitiya H. Jayatissa(1), Zhaoxin Liu(1), Ray Phaneuf(1)