H. Bleichner

IRnova (Sweden) — Sweden

Engineering · Physical Sciences

14h-index753citations47works0.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(27), Semiconductor materials and devices(18), Silicon and Solar Cell Technologies(16), Advancements in Semiconductor Devices and Circuit Design(15), Thin-Film Transistor Technologies(14)

Publications47 total

Recent advances of QWIP development in Sweden
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2007· 7 cited
Turn-off failure mechanisms in gto thyristors of different anode designs supported by 3-d simulations
2005
A comparative study of the carrier distributions in dynamically operating GTO's by means of two optically probed measurement methods
2005· 6 cited
The influence of gate-metallization potential drop on transient GTO characteristics
2003· 6 cited
Experimentally verified, temperature dependent physical models/parameters for power device simulation
2002· 1 cited
Cosmic ray-induced DC-stability failure in Si diodes
2002· 3 cited
4.5 kV 4H-SiC diodes with ideal forward characteristic
2002· 32 cited
High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
Materials science forum·2002· 139 cited
Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material
Applied Physics Letters·2001· 46 citedOpen Access
Application of optical emission microscopy for reliability studies in 4H–SiC p+/n−/n+ diodes
Journal of Applied Physics·2001· 41 cited
Precipitate Formation in Heavily Al-Doped 4H-SiC Layers
Materials science forum·2001· 5 cited
Investigation of Electroluminescence across 4H-SiC p<sup>+</sup>/n<sup>-</sup>/n<sup>+</sup> Structures Using Optical Emission Microscopy
Materials science forum·2001· 11 cited
Transient enhanced diffusion of implanted boron in 4H-silicon carbide
Applied Physics Letters·2000· 48 cited
Temperature and injection dependence of the Shockley–Read–Hall lifetime in electron-irradiated p-type silicon
Journal of Applied Physics·1998· 19 cited
Observation of near-surface electrically active defects in n-type 6H–SiC
Journal of Applied Physics·1998· 1 cited
Bright-line defect formation in silicon carbide injection diodes
Applied Physics Letters·1997· 51 cited
Free carrier absorption and lifetime mapping in 4H SiC epilayers
Journal of Applied Physics·1997· 26 cited
The ambipolar Auger coefficient: Measured temperature dependence in electron irradiated and highly injected n-type silicon
Journal of Applied Physics·1997· 42 cited
Temperature and injection dependence of the Shockley–Read–Hall lifetime in electron irradiated <i>n</i>-type silicon
Journal of Applied Physics·1996· 66 cited
The effect of emitter shortings on turn-off limitations and device failure in GTO thyristors under snubberless operation
IEEE Transactions on Electron Devices·1995· 5 cited
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Frequent Co-authors

E. Nordlander(27), M. Rosling(25), J. Vobecký(8), J Tirén(6), Ulf Magnusson(6), Per Jönsson(5), Maria Lundqvist(5), F. Vojdani(5), M. Isberg(4), Augustinas Galeckas(4), Jan Linnros(4), Mietek Bakowski(4), S. Berg(4), H. Lendenmann(3), Martin S. Janson(3), Petra E. Jönsson(3), K. Nordgren(3), Ferenc Masszi(3), Fanny Dahlquist(2), C. Hallin(2)