M. Voos

Université Paris Cité — France

Physics and Astronomy · Physical Sciences

35h-index6.1kcitations167works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(124), Advanced Semiconductor Detectors and Materials(64), Quantum and electron transport phenomena(49), Chalcogenide Semiconductor Thin Films(18), Semiconductor materials and devices(15)

Publications167 total

Effect of the surface energy on the electron-hole drop luminescence in Ge
Lecture notes in physics·2008
THz generation using interdigitated emitters. Application to the study of QCLs.
SPIRE - Sciences Po Institutional REpository·2007
Spectroscopie téra-Hertz ultra-rapide
SPIRE - Sciences Po Institutional REpository·2007
THz generation by optical rectification and competition with other nonlinear processes
2006Open Access
Strain state in GaN epilayers from optical experiments
Journal of Applied Physics·2001· 5 citedOpen Access
Avant-propos
Comptes Rendus de l Académie des Sciences - Series IV - Physics-Astrophysics·2000
Evolution with Temperature of the Strain State of GaN Thin Layers Grown on Different Substrates
physica status solidi (b)·1999· 4 cited
Dynamics of polaritons in a semiconductor multiple-quantum-well microcavity
Physical review. B, Condensed matter·1998· 33 cited
Radiative transfer in semiconductor microcavities
Physica E Low-dimensional Systems and Nanostructures·1998· 4 cited
Photoluminescence efficiency of semiconductor-microcavity-polaritons far from resonance
Solid State Communications·1998· 4 citedOpen Access
Giant In-Plane Optical Anisotropy of Semiconductor Heterostructures with No-Common-Atom
1998
Relaxation of microcavity polariton
Superlattices and Microstructures·1997· 6 citedOpen Access
Magnetopolaritons in a semiconductor quantum well microcavity
Physical review. B, Condensed matter·1997· 20 citedOpen Access
Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
MRS Internet Journal of Nitride Semiconductor Research·1997· 8 citedOpen Access
Photoluminescence intensity in a semiconductor microcavity
Solid State Communications·1996· 9 citedOpen Access
Semiconductor microcavity under magnetic field: From the weak coupling to the strong coupling regime
Solid-State Electronics·1996· 2 citedOpen Access
From Fermi's Golden Rule to the Vacuum Rabi Splitting: Magnetopolaritons in a Semiconductor Optical Microcavity
Physical Review Letters·1995· 129 citedOpen Access
Excitation spectroscopy of the visible photoluminescence of porous silicon
Solid State Communications·1995· 6 cited
Some Optical Properties of Semiconductor Quantum Well Heterostructures
1995
High-Efficiency Energy Up-Conversion by an "Auger Fountain" at an InP-AIInas Type-II Heterojunction
Physical Review Letters·1994· 121 cited
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Frequent Co-authors

P. Voisin(16), G. Bastard(14), Y. Guldner(14), J. P. Vieren(12), C. Delalande(11), C. Benoît à la Guillaume(9), L. Esaki(7), L. L. Chang(5), Manijeh Razeghi(5), M.-H. Meynadier(4), J. A. Brum(4), J.P. Hirtz(4), B. Etienne(4), J. Orgonasi(3), W. Schlapp(3), F. Salvan(3), J. P. André(3), Jean‐Marc Berroir(3), J. P. Faurie(2), G. Weimann(2)