J.P. Hirtz

3S Photonics (France) — France

Physics and Astronomy · Physical Sciences

16h-index998citations77works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(48), Semiconductor Lasers and Optical Devices(20), Semiconductor materials and devices(18), Semiconductor materials and interfaces(12), Quantum and electron transport phenomena(10)

Publications77 total

Reliable pulsed-operation of 1064-nm wavelength-stabilized diode lasers at high-average-power: boosting fiber lasers from the seed
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2010· 2 cited
High reliability level on single-mode 980nm-1060 nm diode lasers for telecommunication and industrial applications
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2008· 22 cited
High Brightness Single-Mode 1060-nm Diode Lasers for Demanding Industrial Applications
2007· 6 cited
Demonstration of GaInP/GaAs heterojunction bipolar transistors grown with reduced toxicity all-metalorganic precursors
2002· 1 cited
Photoluminescence microscopy of mirror facets of broad area laser diodes
2002
Analysis of degradation mechanisms in high power AlGaAs 808 nm laser bars
2002· 1 cited
Optical and photoelectric study of mirror facets in degraded high power AlGaAs 808 nm laser diodes
Journal of Applied Physics·2000· 34 cited
Microphotoluminescence mapping of packaging-induced stress distribution in high-power AlGaAs laser diodes
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2000· 8 cited
Scaleability of dopant composition in semiconductor crystals grown by the Bridgman process in the presence of magnetic fields
38th Aerospace Sciences Meeting and Exhibit·2000· 1 cited
Microphotoluminescence mapping of packaging-induced stress distribution in high-power AlGaAs laser diodes
Applied Physics Letters·1999· 39 cited
High-brightness stack arrays for DPSSL laser applications
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1998
Reliability and qualification methodology of 60 W QCW linear bar arrays
Microelectronics Reliability·1998
Generation of high-energy (0.3 μJ) short pulses (>400 ps) from a gain-switched laser diode stack with subnanosecond electrical pump pulses
IEEE Journal of Selected Topics in Quantum Electronics·1997· 9 cited
Auto-Stacking of High Power Laser Diode Arrays a Cost-Effective Approach for Delivering 10 Kw/cm<sup>2</sup>
1996· 1 cited
Recent Progress on High Power Laser Diode Arrays at Thomson-CSF Composants Specifiques (TCS)
1996
A comparative study of GaInP/GaAs heterojunction bipolar transistors grown by CBE using TBA/TBP and AsH/sub 3//PH/sub 3/ sources
IEEE Electron Device Letters·1994· 5 cited
Epitaxy with “Safer-to-Handle” Precursors
1994
Low pressure MOVPE growth of ZnSe, ZnTe, and ZnSe/ZnTe strained-layer superlattices
Journal of Electronic Materials·1993· 11 cited
High quality 0.98 μm GaInAs/GaAs/GaInP lasers grown by CBE using tertiarybutylarsine and tertiarybutylphosphine
Electronics Letters·1993· 8 cited
Chemical beam epitaxy of Ga0.5In0.5P using tertiarybutylphosphine
Journal of Crystal Growth·1993· 6 cited
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Frequent Co-authors

P. Maurel(9), Manijeh Razeghi(8), M. N. Charasse(8), José Carlos Fernández‐García(8), M. Voos(6), J.P. Duchemin(6), Y. Guldner(5), J. P. Vieren(5), Muriel Bonnet(4), Jean-Pierre Landesman(4), Jean-Charles Garcia(4), B. Bartenlian(4), J. Chazelas(4), S. D. Hersee(3), T. P. Pearsall(3), B. de Crémoux(3), E. Vassilakis(3), M. Bettiati(3), François Laruelle(3), P. Pagnod-Rossiaux(3)