W. T. Beard

Mayo Clinic — United States

Physics and Astronomy · Physical Sciences

14h-index869citations32works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(13), Semiconductor materials and devices(9), Advanced X-ray Imaging Techniques(8), Photonic and Optical Devices(6), Semiconductor Lasers and Optical Devices(6)

Publications32 total

RF characterisation of fully depleted SOI MOSFET with Si substrate removed
Electronics Letters·2002· 3 cited
High-performance fully-depleted SOI RF CMOS
IEEE Electron Device Letters·2002· 36 cited
Integrated photonic inverter with gain
IEEE Photonics Technology Letters·2001· 6 cited
The role of photomask resolution on the performance of arrayed-waveguide grating devices
Journal of Lightwave Technology·2001· 45 cited
Role of photomask resolution on the performance of arrayed-waveguide grating devices
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2000· 4 cited
Nonuniversality in mound formation during semiconductor growth
Physical review. B, Condensed matter·1999· 24 cited
The Evaluation of Quartz Resonators Via X-Ray Diffraction Topography
Review of Progress in Quantitative Nondestructive Evaluation·1999· 1 cited
Dynamical Effects in High Resolution Topographic Imaging of Electronic Devices
1999· 1 cited
Air-bridges, air-ramps, planarization, and encapsulation using pyrolytic photoresist in the fabrication of three-dimensional microstructures
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1997· 7 cited
{7 6 6} Oriented V-groove surfaces on Br2–CH3OH etched (1 0 0) GaAs wafers
Journal of Materials Science Materials in Electronics·1997· 1 cited
High-resolution imaging of electronic devices using line modified-asymmetric crystal topography (LM-ACT)
Il Nuovo Cimento D·1997· 25 cited
High resolution imaging of electronic devices via x-ray diffraction topography
Applied Physics Letters·1996· 28 cited
Application of Line Modified-Asymmetric Crystal Topography For Qualitative and Quantitative Evaluation of Integrated Circuits
Advances in X-ray Analysis·1995· 2 cited
Application of Line Modified-Asymmetric Crystal Topography for Qualitative and Quantitative Evaluation of Integrated Circuits
Advances in X-ray Analysis·1994· 1 cited
In-depth resolutions of integrated circuits via X-ray based line modified asymmetric crystal topography
1994· 2 cited
In-Vacuum Photoreflectance Characterization of Gallium Arenide/aluminum Gallium Arsenide Surfaces Using a One Eyed Quantum Well Structure
1994
Temperature and doping-concentration dependence of the oscillatory properties of the photoreflectance spectra from GaAs grown by molecular-beam epitaxy
Physical review. B, Condensed matter·1991· 29 cited
Photoreflectance study of the internal electric fields at the n-type GaAs surface and across the n-type GaAs/substrate interface
Superlattices and Microstructures·1990· 11 cited
LM-ACT for Imaging RAM Devices in X-Ray Diffraction Topographs
Advances in X-ray Analysis·1989· 3 cited
Barrier impurity states in modulation doped AlGaAs/GaAs multi-quantum wells
Surface Science·1988· 16 cited
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Frequent Co-authors

B. V. Shanabrook(6), R. W. Armstrong(6), O. J. Glembocki(5), D.R. Stone(4), Ronald W. Armstrong(4), J. Comas(3), X. J. Zhang(3), N. Bottka(2), J.-M. Mercy(2), B. D. McCombe(2), Wei Chen(2), Robert F. Smith(2), Rod Mincher(2), Ian R. Stewart(2), C.L. Chen(2), LU Chang-yi(2), R. A. Wilson(2), K. A. Green(2), F.G. Johnson(2), R. Merlín(2)