J. Comas

Physics and Astronomy · Physical Sciences

22h-index1.9kcitations94works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(35), Ion-surface interactions and analysis(35), Semiconductor materials and devices(33), Semiconductor materials and interfaces(18), Integrated Circuits and Semiconductor Failure Analysis(18)

Publications94 total

Self-referenced carrier frequency offset interferogram correction for dual-comb systems
2025
Scaling of the nonlinear optical cross sections of GaAs-AlGaAs multiple quantum-well hetero n-i-p-i's
IEEE Journal of Quantum Electronics·1994· 3 cited
Interface sharpness during the initial stages of growth of thin, short-period III–V superlattices
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·1993· 3 cited
Defects in III–V materials and the accommodation of strain in layered semiconductors
Journal of Electronic Materials·1993· 1 cited
Defect formation in semiconductor layers during epitaxial growth
Journal of Crystal Growth·1993· 1 cited
Interface sharpness in low-order III–V superlattices
Thin Solid Films·1992· 4 cited
ChemInform Abstract: Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs, Al0.3Ga0.7As, In0.2Ga0.8As, In0.53Ga0.47As, In0.52Al0.48As, and InP.
ChemInform·1992· 1 cited
Reduction of DX Centers in Superlattice Alloy‐Like Material High Electron Mobility Transistors
Journal of The Electrochemical Society·1992· 5 cited
Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs , Al0.3Ga0.7As , In0.2Ga0.8As , In0.53Ga0.47As , In0.52Al0.48As , and InP
Journal of The Electrochemical Society·1992· 166 cited
Interface Roughness, Composition, and Alloying of Low-Order ALAS/GAAS Superlattices Studied by X-Ray Diffraction
MRS Proceedings·1992
The Influence of Lattice Mismatch on Indium Phosphide Based High Electron Mobility Transistor (HEMT) Structures Observed in High Resolution Monochromatic Synchrotron X-Radiation Diffraction Imaging
MRS Proceedings·1992
Rapid-thermal annealing for quantum-well heterostructure device fabrication
IEEE Transactions on Electron Devices·1992· 9 cited
Periodicities associated with low-order AlAs/GaAs superlattices
Thin Solid Films·1991· 1 cited
Lattice damage and atomic mixing induced by As++ implantation and thermal annealing in AlAs/GaAs multiple quantum-well structures
Journal of Applied Physics·1991· 12 cited
Growth and Characterization of Ternary and Quaternary Compounds of In<sub>y</sub> (Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>1-y</sub>As on (100) InP
MRS Proceedings·1991· 2 cited
Controlled Interface Roughness in GaAs/AlAs Superlattices
MRS Proceedings·1991· 1 cited
Periodicities in the X-Ray Diffraction of Low Order ALAS/GAAS Superlattices
MRS Proceedings·1991· 2 cited
Unintentional indium incorporation in GaAs grown by molecular beam epitaxy
Applied Physics Letters·1990· 2 cited
Redistribution of H and Be in GaAs/AlAs multilayer structures with post-implantation annealing
Journal of Applied Physics·1989· 4 cited
Ion Beam Processing Of Multilayer Semiconductor Structures
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1988
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Frequent Co-authors

B. V. Shanabrook(8), Senthilarasu Sundaram(5), R. Merlín(4), L. Plew(4), William H. Lucke(4), W. T. Beard(3), Thomas A. Perry(3), C. Burleigh Cooper(3), Gordon Wood Anderson(3), David R. Myers(3), J. L. Aubel(3), S. G. Bishop(3), O. J. Glembocki(2), N. Bottka(2), G. DeSalvo(2), R. L. Schmidt(2), W. V. McLevige(2), K. V. Vaidyanathan(2), B. G. Streetman(2), S. W. Kirchoefer(2)