G. DeSalvo

Northrop Grumman (United States) — United States

Engineering · Physical Sciences

11h-index562citations48works0.02yr avg
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Research Topics

Semiconductor materials and devices(25), Advancements in Semiconductor Devices and Circuit Design(18), Silicon Carbide Semiconductor Technologies(15), Semiconductor Quantum Structures and Devices(12), Radio Frequency Integrated Circuit Design(7)

Publications48 total

Silicon Carbide Terahertz Emitting Devices
Journal of Electronic Materials·2008· 16 cited
Novel 1 kv, normally-off, vertically integrated, dual-gate VJFET power switch with a low 4.6 mωcm<sup>2</sup> on-state resistance
Conference digest·2007· 3 cited
8 kV Normally-off All-SiC Cascode Power Switch Using VJFETs
2007· 5 cited
Fabrication of a robust high-performance floating guard ring edge termination for power Silicon Carbide Vertical Junction Field Effect Transistors
2007· 9 cited
Using a VNA to find the ‘sweet spot’ when biasing a MMIC — An application
2006
SILICON CARBIDE STATIC INDUCTION TRANSISTORS
Selected topics in electornics and systems·2006· 4 cited
2.1 mΩ-cm2, 1.6 kV 4H-Silicon Carbide VJFET for Power Applications
2006· 5 cited
High Current [200 A], Low Resistance (0.87 mΩ-cm/sub 2/) Normally-off SiC VJFETs for Power Switching Applications
2006· 1 cited
High-Yield Silicon Carbide Vertical Junction Field Effect Transistor Manufacturing for RF and Power Applications
2006· 10 cited
A 6 to 16 GHz Linearized GaN Power Amplifier
2006· 13 cited
SILICON CARBIDE STATIC INDUCTION TRANSISTORS
International Journal of High Speed Electronics and Systems·2005· 11 cited
2.1 m/spl Omega/-cm2, 1.6 kV 4H-Silicon Carbide VJFET for Power Applications
International Semiconductor Device Research Symposium·2005
Pseudomorphic SiC alloys formed by Ge ion implantation
Applied Physics Letters·2004· 9 cited
S-Band Operation of SiC Power MESFET With 20 W (4.4 W/mm) Output Power and 60% PAE
IEEE Transactions on Electron Devices·2004· 54 cited
Metallization schemes for radio frequency microelectromechanical system switches
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2003· 9 cited
A silicon carbide self-aligned and ion implanted static induction transistor (SAI-SIT) for 150 watt S-Band operation
2003· 6 cited
Decoupled electrical/thermal modeling of AlGaAs/GaAs heterojunction bipolar transistors
2002· 1 cited
Effect of device layout on the thermal resistance of high-power thermally-shunted heterojunction bipolar transistors
2002· 3 cited
Experimental development and incorporation of strain in p-type GaAsSb/InAlAs single metal heterostructure field effect transistors
2002
Power performance of thermally-shunted heterojunction bipolar transistors
2002· 5 cited
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Frequent Co-authors

J. Ebel(19), C. Bozada(18), R. Dettmer(16), J. Gillespie(16), K. Nakano(14), T. Quach(14), T. Jenkins(12), C. Pettiford(12), C. Havasy(11), J. Sewell(11), Charles Cerny(9), Ty McNutt(7), D. Via(7), R. Anholt(7), G. D. Via(6), Victor Veliadis(6), Megan McCoy(6), Eric J. Stewart(6), C. Ito(6), D. C. Look(5)