Ty McNutt

Cree (China) — China

Engineering · Physical Sciences

21h-index2.1kcitations107works0.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(93), Semiconductor materials and devices(35), Advanced DC-DC Converters(28), Advancements in Semiconductor Devices and Circuit Design(26), Electromagnetic Compatibility and Noise Suppression(24)

Publications107 total

Sliding Window-Based Thermal Topography Determining Thermal Impedance and Thermal Coupling
2023
High-Performance 300 kW 3-Phase SiC Inverter Based on Next Generation Modular SiC Power Modules
PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management·2019· 6 cited
Comparison of Silicon Carbide Packages with Different Solder Attach Materials under High Temperature, Fast Power Cycling Conditions
2019· 1 cited
New SiC 1200 V Power MOSFET & Compact 3.25 mOhm, 41 mm Power Module for Industrial Applications
PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management·2018
Module and System Considerations to Maximize Performance Advantages of SiC Power Devices
Materials science forum·2018· 1 cited
A 200 kVA electric vehicle traction drive inverter having enhanced performance over its entire operating region
2017· 13 cited
Design of a 250 kW, 1200 V SiC MOSFET-based three-phase inverter by considering a subsystem level design optimization approach
2017· 35 cited
A Disruptive Approach to Electric Vehicle Power Electronics Final Report
2017· 2 citedOpen Access
Next-generation MVDC architecture based on 6.5 kV / 200 A, 12.5 mΩ SiC H-bridge and 10 kV / 240 A, 20 mΩ SiC dual power modules
2017· 10 cited
Dynamic Characterization of Next Generation Medium Voltage (3.3 kV, 10 kV) Silicon Carbide Power Modules
2017· 21 cited
Performance analysis of a SiC MOSFET half bridge power module with a Miller clamp
2017· 9 cited
A compact 110 kVA, 140°C ambient, 105°C liquid cooled, all-SiC inverter for electric vehicle traction drives
2017· 29 cited
Switching performance comparison of 1200 V and 1700 V SiC optimized half bridge power modules with SiC antiparallel schottky diodes versus MOSFET intrinsic body diodes
2017· 21 cited
UARK SiC Power MOSFET Model
HubZero·2017· 1 citedOpen Access
Comparing the switching performance of SiC MOSFET intrinsic body diode to additional SiC schottky diodes in SiC power modules
2016· 26 cited
Bidirectional, SiC module-based solid-state circuit breakers for 270 V<inf>dc</inf> MEA/AEA systems
2016· 42 cited
The next generation of high voltage (10 kV) silicon carbide power modules
2016· 99 cited
Verification of High Frequency SiC On-Board Vehicle Battery Charger for PHV
SAE technical papers on CD-ROM/SAE technical paper series·2016· 6 cited
Temperature Dependence of High Dielectric Strength Potting Materials for Medium Voltage Power Modules
Journal of Microelectronics and Electronic Packaging·2015
System-Level Packaging of Wide Bandgap Inverters for Electric Traction Drive Vehicles
2015· 3 cited
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Frequent Co-authors

Brandon Passmore(13), Victor Veliadis(11), Harold Hearne(11), Allen R. Hefner(10), H. Alan Mantooth(10), Bret Whitaker(9), Zach Cole(9), D.W. Berning(9), Ranbir Singh(9), Daniel Martin(8), Alexander B. Lostetter(8), K.J. Olejniczak(8), Alan Mantooth(8), Charles Scozzie(7), Adam Barkley(6), Megan Snook(6), Paul Potyraj(6), S.S. Frank(5), Laura D. Marlino(5), Michael D. Glover(5)