Adam Barkley

Cree (China) — China

Engineering · Physical Sciences

14h-index933citations29works0.02yr avg
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Research Topics

Advanced DC-DC Converters(21), Silicon Carbide Semiconductor Technologies(16), Multilevel Inverters and Converters(15), Microgrid Control and Optimization(8), Electromagnetic Compatibility and Noise Suppression(7)

Publications29 total

SiC MOSFET Based Bi-Directional 3-Phase AC/DC Converter
2018· 6 cited
Reliability Testing of SiC JBS Diodes for Harsh Environment Operation
PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management·2018· 2 cited
650 V Silicon Carbide MOSFETs in Totem-Pole Bridgeless PFC Design Achieves High Efficiency (80+ Titanium) without adding Complexity and Cost
PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management·2018
Surge current failure mechanisms in 4H-SiC JBS rectifiers
2018· 11 cited
New generation 6.5 kV SiC power MOSFET
2017· 68 cited
Power Cycle Testing of Sintered SiC-MOSFETs
2017· 19 cited
New 1000V SiC MOSFETs enable improved efficiency, density, and cost tradeoff space for PFCs
2017· 6 cited
Verification of High Frequency SiC On-Board Vehicle Battery Charger for PHV
SAE technical papers on CD-ROM/SAE technical paper series·2016· 6 cited
900V silicon carbide MOSFETs for breakthrough power supply design
2015· 19 cited
A UVLO Circuit in SiC Compatible With Power MOSFET Integration
IEEE Journal of Emerging and Selected Topics in Power Electronics·2014· 19 cited
A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices
IEEE Transactions on Power Electronics·2013· 418 cited
A 4H Silicon Carbide Gate Buffer for Integrated Power Systems
IEEE Transactions on Power Electronics·2013· 41 cited
High-frequency AC-DC conversion with a silicon carbide power module to achieve high-efficiency and greatly improved power density
2013· 15 cited
Wide bandgap packaging for next generation power conversion systems
2013· 6 cited
A high-frequency, high-efficiency silicon carbide based phase-shifted full-bridge converter as a core component for a high-density on-board vehicle battery charging system
2013· 19 cited
Wide bandwidth system identification of MVDC distribution system by applying perturbations to an existing converter
2013· 9 cited
Package design and development of a low cost high temperature (250°C), high current (50+A), low inductance discrete power package for advanced Silicon Carbide (SiC) and Gallium Nitride (GaN) devices
IMAPSource Proceedings·2013· 1 cited
A High Temperature, Fast Switching SiC Multi-chip Power Module (MCPM) for High Frequency (> 500 kHz) Power Conversion Applications
Additional Conferences (Device Packaging HiTEC HiTEN & CICMT)·2013· 2 cited
Packaging of High Frequency, High Temperature Silicon Carbide (SiC) Multichip Power Module (MCPM) Bi-directional Battery Chargers for Next Generation Hybrid Electric Vehicles
IMAPSource Proceedings·2012· 8 cited
Wide bandwidth system identification of AC system impedances by applying pertubations to an existing converter
2011· 50 cited
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Frequent Co-authors

Ty McNutt(10), Enrico Santi(10), Brandon Passmore(9), Bret Whitaker(8), Zach Cole(8), Alexander B. Lostetter(7), Daniel Martin(5), Brett Hull(4), Edward Van Brunt(3), Scott T. Allen(3), Sei‐Hyung Ryu(3), Antonino Riccobono(3), Koji Shiozaki(2), John W. Palmour(2), S.S. Frank(2), Laura D. Marlino(2), Mihir Mudholkar(2), Paul Shepherd(2), Michael D. Glover(2), Alex Lostetter(2)