Cree (China) — China
Engineering · Physical Sciences
9h-index250citations19works0.02yr avg
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Research Topics
Silicon Carbide Semiconductor Technologies(15), Advanced DC-DC Converters(10), Electromagnetic Compatibility and Noise Suppression(6), Multilevel Inverters and Converters(5), Semiconductor materials and devices(3)
Publications19 total
New SiC 1200 V Power MOSFET & Compact 3.25 mOhm, 41 mm Power Module for Industrial Applications
PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management·2018
2014Open Access
Journal of Electronic Materials·2014· 17 cited
IEEE Transactions on Power Electronics·2013· 41 cited
High Current (>1000A), High Temperature (>200°C) Silicon Carbide Trench MOSFET (TMOS) Power Modules for High Performance Systems
2012
SAE International journal of passenger cars. Electronic and electrical systems·2012· 2 cited
IEEE Transactions on Power Electronics·2012· 57 cited
SAE technical papers on CD-ROM/SAE technical paper series·2010· 3 cited
2009· 9 cited
Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition·2008· 19 cited
Multilayer interconnects for a high power packaging strategy
1998· 4 cited
Frequent Co-authors
Ty McNutt(10), Brandon Passmore(10), Brice McPherson(8), Zach Cole(5), Marcelo Schupbach(4), Bret Whitaker(4), K.J. Olejniczak(4), Robert Shaw(4), B. Reese(3), S.S. Frank(3), Laura D. Marlino(3), Alan Mantooth(3), Daniel Martin(3), John Fraley(3), Jared Hornberger(3), Brad Reese(3), R.M. Schupbach(3), Javier Valle-Mayorga(2), H. Alan Mantooth(2), Sei‐Hyung Ryu(2)