Alexander B. Lostetter

Engineering · Physical Sciences

17h-index1.2kcitations60works0.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(44), Advanced DC-DC Converters(24), Electromagnetic Compatibility and Noise Suppression(15), Multilevel Inverters and Converters(9), Electronic Packaging and Soldering Technologies(8)

Publications60 total

A review of SiC power module packaging technologies: Attaches, interconnections, and advanced heat transfer
2017· 18 cited
Verification of High Frequency SiC On-Board Vehicle Battery Charger for PHV
SAE technical papers on CD-ROM/SAE technical paper series·2016· 6 cited
A UVLO Circuit in SiC Compatible With Power MOSFET Integration
IEEE Journal of Emerging and Selected Topics in Power Electronics·2014· 19 cited
A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices
IEEE Transactions on Power Electronics·2013· 418 cited
High-frequency AC-DC conversion with a silicon carbide power module to achieve high-efficiency and greatly improved power density
2013· 15 cited
A high-frequency, high-efficiency silicon carbide based phase-shifted full-bridge converter as a core component for a high-density on-board vehicle battery charging system
2013· 19 cited
Extreme Environments in Energy Production and Utilization
2013
Silicon carbide based Anode Supply Module Array for hall effect thrusters
2013· 2 cited
A High Temperature, Fast Switching SiC Multi-chip Power Module (MCPM) for High Frequency (> 500 kHz) Power Conversion Applications
Additional Conferences (Device Packaging HiTEC HiTEN & CICMT)·2013· 2 cited
A 450°C High Voltage Gain AC Coupled Differential Amplifier
Materials science forum·2012· 1 cited
High Temperature Silicon Carbide Power Modules for High Performance Systems
Materials science forum·2012· 5 cited
Silicon carbide power processing unit for Hall effect thrusters
2012· 4 cited
Packaging of High Frequency, High Temperature Silicon Carbide (SiC) Multichip Power Module (MCPM) Bi-directional Battery Chargers for Next Generation Hybrid Electric Vehicles
IMAPSource Proceedings·2012· 8 cited
Thermal Stress Reliability Study on Substrates for High Temperature, Silicon Carbide Power Electronic Modules
Additional Conferences (Device Packaging HiTEC HiTEN & CICMT)·2012· 1 cited
A High Current (>1500A) Power Module for High Temperature, High Performance Applications Using SiC TMOS Power Switches
Additional Conferences (Device Packaging HiTEC HiTEN & CICMT)·2012
HIGH TEMPERATURE (250 °C) SIC POWER MODULE FOR MILITARY HYBRID ELECTRICAL VEHICLE APPLICATIONS
SAE technical papers on CD-ROM/SAE technical paper series·2011· 16 cited
An All Silicon Carbide High Temperature (450+ °C) High Voltage Gain AC Coupled Differential Amplifier
Materials science forum·2011· 2 cited
High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules
Additional Conferences (Device Packaging HiTEC HiTEN & CICMT)·2011· 2 cited
High Temperature Silicon Carbide Power Modules for High Performance Systems
Additional Conferences (Device Packaging HiTEC HiTEN & CICMT)·2011· 4 cited
High Performance Silicon Carbide Power Modules for Extreme Environment Applications
2010
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Frequent Co-authors

R.M. Schupbach(16), Ty McNutt(14), Brice McPherson(14), H. Alan Mantooth(13), Edgar Cilio(11), Jared Hornberger(10), Marcelo Schupbach(10), B. Reese(9), Adam Barkley(7), Brandon Passmore(7), Bret Whitaker(6), Zach Cole(6), Fred Barlow(6), Robert Shaw(6), Jared Homberger(4), Alan Mantooth(4), Aicha Elshabini(4), K.J. Olejniczak(3), Juan Carlos Balda(3), S. Mounce(3)