S. Mukherjee

National Cheng Kung University — Taiwan

Engineering · Physical Sciences

15h-index928citations47works0.62yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Silicon Carbide Semiconductor Technologies(27), Advancements in Semiconductor Devices and Circuit Design(21), Semiconductor materials and devices(18), Advanced DC-DC Converters(8), Electromagnetic Compatibility and Noise Suppression(8)

Publications46 total

In-Situ Compression of Single-Crystal Copper Micropillars under Electric Current Stressing
2025
Surface Modification of Cu Native Oxide: Ag Displacement for Homogeneous Layering
2025· 1 cited
Phase Transitions of the CU<sub>6</sub>Sn<sub>5</sub> Phase Under Electric Currents
2025· 2 cited
Electric Current-Induced Monoclinic-to-Hexagonal Phase Transition of Cu6Sn5 at Low Temperatures
SSRN Electronic Journal·2025Open Access
Geometric compliance and stress-invariant ordering in electron-wind-driven η-(Cu, Ni)6Sn5
SSRN Electronic Journal·2025Open Access
Ar Fast Atom Beam (Ar-Fab) and Ethanol Vapor-Assisted Vacuum Ultraviolet (E-Vuv) Combined Cu Surface Modification for Dense Ag Deposition
SSRN Electronic Journal·2025Open Access
Impact of Electrical Current Stressing on η'-Cu<sub>6</sub>Sn<sub>5</sub> in Electronics Packaging
2024· 2 cited
Emerging Frontiers in Smart Environment and Healthcare – A Vision
Information Systems Frontiers·2019· 20 citedOpen Access
Special issue on Ambient Intelligence
Information Systems Frontiers·2008· 35 citedOpen Access
Non-contact voltage and electric field measurement using the electric potential sensor
Figshare·2007· 1 citedOpen Access
Conclusions and Key Challenges
Philips Research·2006
AmIware: Hardware Technology Drivers of Ambient Intelligence (Philips Research Book Series)
Springer eBooks·2006· 8 cited
Comparison of junction-isolated and soi high-voltage devices operating in the source-follower mode
2005· 19 cited
Soi High Voltage Ldmos and Ligbt Transistors with a Buried Diode and Surface P-Layer
2005· 7 cited
Improved Ruggedness of a High Current Vertical Power Dmos
2005· 1 cited
A thin-layer high-voltage silicon-on-insulator hybrid LDMOS/LIGBT device
2003· 9 cited
Thin-layer silicon-on-insulator high-voltage PMOS device and application
2003· 11 cited
600 V power conversion system-on-a-chip based on thin layer silicon-on-insulator
2003· 26 cited
Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURF LDMOS transistors
2002· 76 cited
TEFET-a high density, low erase voltage, trench flash EEPROM
2002
page 1 of 3Next →

Frequent Co-authors

Ted Letavic(9), M. Simpson(9), E. Arnold(8), Shih‐kang Lin(7), S. Merchant(5), H. Pein(5), J.K.O. Sin(5), Helmut Baumgart(4), R. Egloff(4), J. Petruzzello(4), Jonathan Young(4), R. Aquino(3), V. Rumennik(3), L. Tsou(3), R. T. Pinker(2), S.S. Wong(2), Emile Aarts(2), J. Curcio(2), Elmar Peters(2), Mariana Amato(2)