J. Dazord

Physics and Astronomy · Physical Sciences

12h-index508citations77works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(26), Semiconductor materials and devices(22), Silicon Carbide Semiconductor Technologies(21), Advanced Semiconductor Detectors and Materials(10), Semiconductor materials and interfaces(9)

Publications77 total

Correlation between gas phase and solid composition in Bx Ga1-x As/GaAs epilayers grown by MOVPE
Università del Salento·2015Open Access
Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature
Materials science forum·2010· 7 cited
Evolution of 3C-SiC islands nucleated from a liquid phase on Si face α-SiC substrates
Thin Solid Films·2010· 5 cited
Effects of Temperature and Heating Rate on the Precipitation of 3C-SiC Islands on 4H-SiC(0001) from a Liquid Phase
Materials science forum·2009
Study of the 3C-SiC nucleation from a liquid phase on a C face 6H-SiC substrate
Journal of Crystal Growth·2009· 19 cited
Effect of growth parameters on the surface morphology of 3C-SiC homoepitaxial layers grown by chemical vapor deposition
HAL (Le Centre pour la Communication Scientifique Directe)·2009
Dots formation by CVD in the SiC-Si hetero-system
HAL (Le Centre pour la Communication Scientifique Directe)·2009
Growth Mechanism of 3C-SiC Heteroepitaxial Layers on α-SiC by VLS
Materials science forum·2008· 3 cited
Dots Formation by CVD in the SiC-Si Hetero-System
Materials science forum·2008· 1 cited
Influence of boron surface enrichment on the growth mode of BGaAs epilayers grown on GaAs by metalorganic vapour phase epitaxy
Thin Solid Films·2008· 9 cited
Influence of boron surface enrichment on the growth mode of BGaAs epilayers grown on GaAs by MOVPE
HAL (Le Centre pour la Communication Scientifique Directe)·2008
Nucleation of 3C–SiC on 6H–SiC from a liquid phase
Acta Materialia·2007· 26 cited
Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC
Materials science forum·2007Open Access
Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC
Materials science forum·2007· 9 citedOpen Access
High purity boron nitride thin films prepared by the PDCs route
Surface and Coatings Technology·2007· 35 cited
Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE
Journal of Crystal Growth·2006· 31 cited
Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition
Materials Science and Engineering B·2006· 24 cited
Surface preparation of -SiC for the epitaxial growth of 3C–SiC
Journal of Crystal Growth·2004· 18 cited
Potential of HMDS/C<sub>3</sub>H<sub>8</sub> Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)
Materials science forum·2004
Comparative Studies of ‹0001› 4H-SiC Layers Grown with either Silane or HexaMethylDiSilane / Propane Precursor Systems
Materials science forum·2004· 9 cited
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Frequent Co-authors

Y. Monteil(23), J. Bouix(15), Gabriel Ferro(13), Laurent Auvray(10), H. Dumont(9), H. Mongeot(8), François Cauwet(5), H. Vincent(5), Véronique Soulière(5), Philippe Miele(4), C. Vincent(4), Olivier Kim-Hak(4), Ghassan Younes(4), H. R. Atchekzaï(4), Jean‐Pierre Tuchagues(4), Sandrine Juillaguet(3), B. Nsouli(3), Jean Lorenzzi(3), J.-P. Tuchagues(3), J. Cueilleron(3)