Olivier Kim-Hak

Institut polytechnique de Grenoble — France

Engineering · Physical Sciences

9h-index298citations29works0.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(24), Semiconductor materials and devices(14), Copper Interconnects and Reliability(10), Advanced ceramic materials synthesis(5), Silicon and Solar Cell Technologies(5)

Publications29 total

On the Reactivity of Silicon Nitride during the Electroless NiP Deposition for the Front Side Metallization of Crystalline Silicon Solar Cells
ECS Solid State Letters·2012· 1 cited
Microwave sintering and thermoelectric properties of p-type (Bi0.2Sb0.8)2Te3 powder
Powder Technology·2012· 23 cited
A comparative study of Spark Plasma Sintering (SPS), Hot Isostatic Pressing (HIP) and microwaves sintering techniques on p-type Bi2Te3 thermoelectric properties
Materials Research Bulletin·2012· 92 cited
Laser Processing for Manufacturing of High Efficiency and Thin Silicon Solar Cells Status of the European Eurogia+ LAPSIS Project
EU PVSEC·2012Open Access
Effect of nitrogen impurity on the stabilization of 3C–SiC polytype during heteroepitaxial growth by vapor–liquid–solid mechanism on 6H–SiC substrates
Diamond and Related Materials·2011· 6 cited
On the Mechanism of Twin Boundary Elimination in 3C-SiC(111) Heteroepitaxial Layers on α-SiC Substrates
Materials science forum·2011· 7 cited
Growth of silicon oxide nanowires at low temperature using tin hydroxide catalyst
Journal of Crystal Growth·2011· 9 cited
Incorporation of group III, IV and V elements in 3C–SiC(111) layers grown by the vapour–liquid–solid mechanism
Journal of Crystal Growth·2010· 9 cited
Is the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC?
Materials science forum·2010· 6 cited
Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase
Materials science forum·2010· 4 cited
Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates
Materials science forum·2010· 8 cited
TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds
Materials science forum·2010· 3 cited
Evolution of 3C-SiC islands nucleated from a liquid phase on Si face α-SiC substrates
Thin Solid Films·2010· 5 cited
Étude de la nucléation du SiC cubique sur substrats de SiC hexagonaux à partir d’une phase liquide Si-Ge
theses.fr (ABES)·2009
Defect-induced polytype transformations in LPE grown SiC epilayers on (111) 3C-SiC seeds grown by VLS on 6H-SiC
Physica B Condensed Matter·2009· 4 cited
Searching for Ge Clusters inside 3C-SiC Layers Grown by Vapor-Liquid-Solid Mechanism on 6H-SiC Substrates
Materials science forum·2009· 9 cited
Effects of Temperature and Heating Rate on the Precipitation of 3C-SiC Islands on 4H-SiC(0001) from a Liquid Phase
Materials science forum·2009
Study of the 3C-SiC nucleation from a liquid phase on a C face 6H-SiC substrate
Journal of Crystal Growth·2009· 19 cited
Growth and characterization of low doped 3C-SiC layers deposited by the VLS technique
HAL (Le Centre pour la Communication Scientifique Directe)·2009
3C-SiC Islands Formation on 6H-SiC(0001) Substrate from a Liquid Phase
Materials science forum·2008
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Frequent Co-authors

Gabriel Ferro(24), Jean Lorenzzi(12), Maher Soueidan(11), François Cauwet(9), Didier Chaussende(9), Davy Carole(7), B. Nsouli(6), Maya Marinova(6), Efstathios K. Polychroniadis(6), J. Dazord(5), P. Chaudouët(5), Georgios Zoulis(5), Jean Camassel(4), Nikoletta Jegenyés(4), Sandrine Juillaguet(4), Y. Monteil(4), Olivier Dezellus(3), F. Mercier(3), Mathieu Soulier(2), Sébastien Saunier(2)