P. Normand

National Centre of Scientific Research "Demokritos" — Greece

Engineering · Physical Sciences

29h-index2.9kcitations183works0.82yr avg
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Research Topics

Semiconductor materials and devices(117), Silicon Nanostructures and Photoluminescence(57), Advanced Memory and Neural Computing(52), Ion-surface interactions and analysis(36), Integrated Circuits and Semiconductor Failure Analysis(29)

Publications183 total

Breakdown characteristics of SiN <sub>x</sub> with different stoichiometries for resistive memories <sup>*</sup>
2025Open Access
Resistance Switching Properties of Stoichiometric and Nitrogen Implanted Silicon Nitride Nanolayers on N and P-Type Si Substrates
2025Open Access
Sinx Rrams Performance with Different Stoichiometries
SSRN Electronic Journal·2025Open Access
Effect of Al2O3 on the operation of SiNX-based MIS RRAMs
Solid-State Electronics·2024Open Access
Effect of Silicon Atom Doping in SiN<sub>x</sub> Resistive Switching Films
2024· 1 citedOpen Access
Silicon nitride resistance switching MIS cells doped with silicon atoms
Solid-State Electronics·2024· 4 citedOpen Access
Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate
2023Open Access
Substrate Effect on Low-frequency Noise of synaptic RRAM devices
2022· 2 cited
Random Telegraph Noise of MIS and MIOS Silicon Nitride memristors at different resistance states
2022 IEEE 22nd International Conference on Nanotechnology (NANO)·2022· 3 citedOpen Access
Effect of SOI substrate on silicon nitride resistance switching using MIS structure
Solid-State Electronics·2022· 10 citedOpen Access
Contributors
Elsevier eBooks·2022
Nano-composite MOx materials for NVMs
Elsevier eBooks·2022· 4 cited
Multi-level resistance switching and random telegraph noise analysis of nitride based memristors
Chaos Solitons & Fractals·2021· 1 citedOpen Access
A New 1P1R Image Sensor with In-Memory Computing Properties Based on Silicon Nitride Devices
2021· 15 cited
Multi-level resistance switching and random telegraph noise analysis of\n nitride based memristors
arXiv (Cornell University)·2021· 24 citedOpen Access
Understanding the role of defects in Silicon Nitride-based resistive switching memories through oxygen doping
IEEE Transactions on Nanotechnology·2021· 39 cited
Ion‐Activated Greatly Enhanced Conductivity of Thin Organic Semiconducting Films in Two‐Terminal Devices
Advanced Electronic Materials·2020· 2 cited
Plasma Modified Silicon Nitride Resistive Switching Memories
2019· 3 citedOpen Access
Future and Emergent Materials and Devices for Resistive Switching
2018· 2 cited
Resistance Switching Properties of Silicon Nitride Material with Heavily Doped Si As Bottom Electrode
ECS Meeting Abstracts·2018
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Frequent Co-authors

D. Tsoukalas(27), Panagiotis Dimitrakis(23), E. Kapetanakis(11), A. Claverie(11), V. Ioannou-Sougleridis(9), Caroline Bonafos(8), D. Goustouridis(8), N. Cherkashin(7), M. Carrada(7), S. Chatzandroulis(7), K. Beltsios(6), G. Benassayag(6), Sylvie Schamm‐Chardon(6), D. Skarlatos(5), Michele Perego(5), V. Soncini(5), Vincent Paillard(5), Christopher Pearson(4), S. Kolliopoulou(4), M.C. Petty(4)