V. Ioannou-Sougleridis

National Centre of Scientific Research "Demokritos" — Greece

Engineering · Physical Sciences

19h-index1.2kcitations102works19.52yr avg
OpenAlex↗ORCID↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor materials and devices(74), Silicon Nanostructures and Photoluminescence(30), Advanced Memory and Neural Computing(24), Semiconductor materials and interfaces(20), Advancements in Semiconductor Devices and Circuit Design(14)

Publications101 total

Resistance Switching Properties of Stoichiometric and Nitrogen Implanted Silicon Nitride Nanolayers on N and P-Type Si Substrates
2025Open Access
Overview of deuterium-tritium nuclear operations at JET
Fusion Engineering and Design·2025· 10 citedOpen Access
Effect of Silicon Atom Doping in SiN<sub>x</sub> Resistive Switching Films
2024· 1 citedOpen Access
EUROfusion contributions to ITER nuclear operation
Nuclear Fusion·2024· 19 citedOpen Access
Silicon nitride resistance switching MIS cells doped with silicon atoms
Solid-State Electronics·2024· 4 citedOpen Access
Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate
2023Open Access
Post-metallization annealing and photolithography effects in p-type Ge/Al <sub>2</sub> O <sub>3</sub> /Al MOS structures
ECS Journal of Solid State Science and Technology·2022
Multi-level resistance switching and random telegraph noise analysis of nitride based memristors
Chaos Solitons & Fractals·2021· 1 citedOpen Access
A New 1P1R Image Sensor with In-Memory Computing Properties Based on Silicon Nitride Devices
2021· 15 cited
Multi-level resistance switching and random telegraph noise analysis of\n nitride based memristors
arXiv (Cornell University)·2021· 24 citedOpen Access
Understanding the role of defects in Silicon Nitride-based resistive switching memories through oxygen doping
IEEE Transactions on Nanotechnology·2021· 39 cited
Substrate damage in ion-implanted (100) germanium after extended ms flash lamp annealing: Origins and suppression
Materials Science in Semiconductor Processing·2020· 2 cited
Degradation of Pt-Al <sub>2</sub> O <sub>3</sub> -Ge Metal Oxide Semiconductor Structures due to Pt-Al <sub>2</sub> O <sub>3</sub> Induced Reactions
ECS Journal of Solid State Science and Technology·2020· 2 cited
(Invited) Issues with n-type Dopants in Germanium
ECS Meeting Abstracts·2018
<i>(Invited) </i>Issues with n-type Dopants in Germanium
ECS Transactions·2018· 4 cited
Resistance Switching Properties of Silicon Nitride Material with Heavily Doped Si As Bottom Electrode
ECS Meeting Abstracts·2018
Phosphorous Diffusion in N<sub>2</sub><sup>+</sup>-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering
ECS Journal of Solid State Science and Technology·2017· 6 citedOpen Access
Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy
Journal of Applied Physics·2016· 38 cited
MANOS performance dependence on ALD Al2O3 oxidation source
Microelectronic Engineering·2016· 1 cited
Interface properties of Al–Al2O3–Ge MIS capacitors and the effect of forming gas annealing
Microelectronic Engineering·2016· 6 cited
page 1 of 6Next →

Frequent Co-authors

Panagiotis Dimitrakis(20), P. Normand(19), A. G. Nassiopoulou(17), D. Skarlatos(8), Sylvie Schamm‐Chardon(7), Κωνσταντίνος Γιαννακόπουλος(6), A. Travlos(5), F. Bassani(5), F. Arnaud d’Avitaya(5), Mario Barozzi(5), Ν. Vouroutzis(5), A. Dimoulas(4), Nikolaos Vasileiadis(4), Georgios Ch. Sirakoulis(4), V. Tsakiri(4), Νικόλαος Νικολάου(4), Caroline Bonafos(4), Panagiotis Karakolis(3), D.N. Kouvatsos(3), G. Vellianitis(3)