Riena Jinno

University of Tsukuba — Japan

Materials Science · Physical Sciences

15h-index860citations55works7.02yr avg
OpenAlex↗ORCID↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Ga2O3 and related materials(52), Semiconductor materials and devices(26), Advanced Photocatalysis Techniques(25), ZnO doping and properties(25), Electronic and Structural Properties of Oxides(8)

Publications55 total

Strain Relaxation of Al‐Rich α‐(AlGa)<sub>2</sub>O<sub>3</sub> and α‐Al<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> Superlattice on <i>m</i>‐Plane Sapphire Substrates by Plasma‐Assisted Molecular Beam Epitaxy
Advanced Materials Interfaces·2025· 7 citedOpen Access
Anisotropic dielectric function, direction dependent bandgap energy, band order, and indirect to direct gap crossover in <i>α</i>-(Al<i>x</i>Ga1−<i>x</i>)2O3 (≤x≤1)
Applied Physics Letters·2022· 15 cited
Infrared-active phonon modes and static dielectric constants in <i>α</i>-(Al<i>x</i>Ga1−<i>x</i>)2O3 (0.18 ≤ x ≤ 0.54) alloys
Applied Physics Letters·2022· 8 cited
Prospects for phase engineering of semi-stable Ga2O3 semiconductor thin films using mist chemical vapor deposition
Journal of Applied Physics·2022· 65 cited
Infrared dielectric functions and Brillouin zone center phonons of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>α</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mi>Ga</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> compared to <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>α</mml:mi></mml:math>-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow><mml:mi>Al</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:math>
Physical Review Materials·2022· 16 cited
High-frequency and below bandgap anisotropic dielectric constants in <i>α</i>-(Al<i>x</i>Ga1−<i>x</i>)2O3 (≤x≤1)
Applied Physics Letters·2021· 14 cited
Infrared dielectric functions and Brillouin zone center phonons of $\alpha$-Ga$_2$O$_3$ compared to $\alpha$-Al$_2$O$_3$
arXiv (Cornell University)·2021Open Access
Optical and electrical properties of silicon-implanted <i>α</i> -Al <sub>2</sub> O <sub>3</sub>
Japanese Journal of Applied Physics·2021· 6 cited
Infrared dielectric functions and Brillouin zone center phonons of $α$-Ga$_2$O$_3$ compared to $α$-Al$_2$O$_3$
arXiv (Cornell University)·2021Open Access
Thermal stability of epitaxial <i>α</i>-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire
Applied Physics Letters·2021· 62 cited
Anisotropic Dielectric Functions, Band-to-Band Transitions, and Critical Points in &lt;em&gt;α&lt;/em&gt;-Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;
Insecta mundi·2021· 24 cited
Crystal Orientation Dependence of α-Al 2 O 3 Homoepitaxial Growth
The Japan Society of Applied Physics·2021
Thermal stability of <i>α</i> -(Al <sub> <i>x</i> </sub> Ga <sub> 1– <i>x</i> </sub> ) <sub>2</sub> O <sub>3</sub> films grown on c-plane sapphire substrates with an Al composition up to 90%
Japanese Journal of Applied Physics·2021· 21 cited
Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa) <sub>2</sub> O <sub>3</sub> on m-plane sapphire
Science Advances·2021· 124 citedOpen Access
Thermal stability of α-Ga2O3 films grown on c-plane sapphire substrates via mist-CVD
AIP Advances·2020· 57 citedOpen Access
Thermal Stability of alpha-(Al&lt;sub&gt;&lt;em&gt;x&lt;/em&gt;&lt;/sub&gt;Ga&lt;sub&gt;1-&lt;em&gt;x&lt;/em&gt;&lt;/sub&gt;)&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; Films Grown on C-Plane Sapphire Substrates
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials·2020
Control of Al 2 O 3 Surface Morphology using Plasma-Assisted Molecular Beam Epitaxy
The Japan Society of Applied Physics·2020
Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$-(AlGa)$_2$O$_3$ on m-plane sapphire
arXiv (Cornell University)·2020· 2 citedOpen Access
Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $\alpha$-(AlGa)$_2$O$_3$ on m-plane sapphire
arXiv (Cornell University)·2020Open Access
Study on Growth of High Quality Corundum Gallium Oxide on Sapphire Substrates
Kyoto University Research Information Repository (Kyoto University)·2020· 1 citedOpen Access
page 1 of 3Next →

Frequent Co-authors

Kentaro Kaneko(29), Shizυo Fujita(29), Takayuki Uchida(20), Huili Grace Xing(14), Debdeep Jena(14), Yong-Jin Cho(11), Takeyoshi Onuma(7), Matthew Hilfiker(7), Rafał Korlacki(7), Megan Stokey(7), M. Schubert(7), Celesta S. Chang(5), David A. Muller(5), Shu Takemoto(5), Shao-Ting Ho(4), Vladimir Protasenko(4), Darrell G. Schlom(4), Wenshen Li(4), Kazuki Nomoto(4), Sean Knight(4)