N. Galbiati

Micron (United States) — United States

Engineering · Physical Sciences

6h-index86citations19works0.02yr avg
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Research Topics

Semiconductor materials and devices(19), Advancements in Semiconductor Devices and Circuit Design(10), Semiconductor Quantum Structures and Devices(6), Integrated Circuits and Semiconductor Failure Analysis(5), Ferroelectric and Negative Capacitance Devices(4)

Publications19 total

BE-TANOS: Feasibility and technology limitations
Microelectronic Engineering·2011· 1 cited
Charge retention phenomena in CT silicon nitride: Impact of technology and operating conditions
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2011· 4 cited
Charge retention phenomena in charge transfer silicon nitride: impact of technology and operating conditions
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2011· 1 cited
Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories
2010· 7 cited
Reliability constraints for TANOS memories due to alumina trapping and leakage
2010· 13 cited
Cycling degradation in TANOS stack
Microelectronic Engineering·2009· 11 cited
High voltage transistor degradation in NVM pump application
Microelectronics Reliability·2007
Methodology for Word Line-Contact Dielectric Characterization in Flash Normemories
2007
Oxide Reliability: a new Methodology for Reliability Evaluation at Parametric Testing
IEEE International Integrated Reliability Workshop final report·2006· 3 cited
Oxide Thinning in Shallow Trench Isolation
2006· 3 cited
Impact of interface and bulk trapped charges on transistor reliability
Microelectronics Reliability·2005· 2 cited
Impact of the As dose in m EEPROM technology: characterization and modeling
Microelectronics Reliability·2001Open Access
Plasma Damage Impact in 0.25 um Dual-Gate Technology
2000
Photoluminescence determination of the Be binding energy in direct-gap AlGaAs
Applied Physics Letters·1997· 7 citedOpen Access
Is the be incorporation the same in (311)A and (100) AlGaAs?
Microelectronics Journal·1997· 2 cited
Photoluminescence investigation of p-type Si-doped AlGaAs grown by molecular beam epitaxy on (1 1 1)A, (2 1 1)A and (3 1 1)A GaAs surfaces
Journal of Crystal Growth·1997· 3 cited
Investigation of Si as an n-type dopant in AlGaAs grown by molecular beam epitaxy on high index planes
Semiconductor Science and Technology·1997· 5 cited
Be doping of (311)A and (100) Al0.24Ga0.76As grown by molecular beam epitaxy
Applied Physics Letters·1996· 13 cited
Photoluminescence investigation of Si as p-type dopant in AlGaAs grown by molecular beam epitaxy on high-index planes
Semiconductor Science and Technology·1996· 11 cited

Frequent Co-authors

G. Ghidini(13), C. Scozzari(9), Alessandro Sebastiani(7), Aurelio Giancarlo Mauri(6), Paolo Tessariol(6), Lorenzo Pavesi(6), E. Grilli(6), M. Guzzi(6), M. Henini(6), E. Mascellino(5), R. Bottini(5), Salvatore Amoroso(4), Alessandro Grossi(4), Christian Monzio Compagnoni(4), Alessandro Maconi(4), Alessandro S. Spinelli(4), M. Alessandri(4), Annalisa Del Vitto(4), D. Brazzelli(4), L. Brusaferri(3)