Alessandro Grossi

Engineering · Physical Sciences

18h-index1.0kcitations61works0.02yr avg
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Research Topics

Advanced Memory and Neural Computing(40), Semiconductor materials and devices(39), Ferroelectric and Negative Capacitance Devices(36), Advancements in Semiconductor Devices and Circuit Design(9), Advanced Data Storage Technologies(5)

Publications61 total

A graph-based algorithm for NVM address decoders testing
2024
28nm Data Memory with Embedded RRAM Technology in Automotive Microcontrollers
2023· 12 cited
Ecosistema residencial contemporáneo : principios y oportunidades de diseño sustentable para dimensionar y configurar un proyecto multiescalar
2022
1D modelling of heat transfer and mechanical losses in turbochargers and map efficiency correction
2020
Reliability of CMOS Integrated Memristive HfO2 Arrays with Respect to Neuromorphic Computing
2019· 14 cited
Resistive RAM Endurance: Array-Level Characterization and Correction Techniques Targeting Deep Learning Applications
IEEE Transactions on Electron Devices·2019· 67 citedOpen Access
In-depth Characterization of Resistive Memory-Based Ternary Content Addressable Memories
2018· 22 citedOpen Access
Resistive RAM With Multiple Bits Per Cell: Array-Level Demonstration of 3 Bits Per Cell
IEEE Transactions on Electron Devices·2018· 56 cited
Role of synaptic variability in resistive memory-based spiking neural networks with unsupervised learning
Journal of Physics D Applied Physics·2018· 25 citedOpen Access
Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices
Scientific Reports·2018· 42 citedOpen Access
Temperature impact and programming algorithm for RRAM based memories
2018· 6 cited
Experimental Investigation of 4-kb RRAM Arrays Programming Conditions Suitable for TCAM
IEEE Transactions on Very Large Scale Integration (VLSI) Systems·2018· 76 citedOpen Access
Role of synaptic variability in spike-based neuromorphic circuits with unsupervised learning
2018· 5 citedOpen Access
Improvement of HfO<inf>2</inf> based RRAM array performances by local Si implantation
2017· 10 cited
Cell-to-Cell Fundamental Variability Limits Investigation in OxRRAM Arrays
IEEE Electron Device Letters·2017· 13 citedOpen Access
Bioinspired Programming of Resistive Memory Devices for Implementing Spiking Neural Networks
2017· 2 cited
Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4 kbit RRAM arrays performance
Microelectronic Engineering·2017· 5 citedOpen Access
About the intrinsic resistance variability in HfO<inf>2</inf>-based RRAM devices
2017· 3 cited
Mechanism of the Key Impact of Residual Carbon Content on the Reliability of Integrated Resistive Random Access Memory Arrays
The Journal of Physical Chemistry C·2017· 8 citedOpen Access
プログラムアルゴリズムを用いたHf_1 xAl_xO_yベースRRAMアレイにおける細胞対細胞の変異性の低減【Powered by NICT】
IEEE Electron Device Letters·2017
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Frequent Co-authors

Cristian Zambelli(30), P. Olivo(28), Christian Wenger(17), Eduardo Pérez(12), E. Nowak(10), Elisa Vianello(10), L. Perniola(6), Christian Walczyk(6), Paolo Tessariol(6), Valeriy Stikanov(5), Thomas Schroeder(5), Alberto Modelli(5), C. Scozzari(5), G. Ghidini(5), J. F. Nodin(4), E. Miranda(4), Rino Micheloni(4), Aurelio Giancarlo Mauri(4), M. Alessandri(4), Annalisa Del Vitto(4)