Christian Walczyk

Innovations for High Performance Microelectronics — Germany

Engineering · Physical Sciences

15h-index1.0kcitations32works0.02yr avg
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Research Topics

Semiconductor materials and devices(21), Advanced Memory and Neural Computing(21), Ferroelectric and Negative Capacitance Devices(20), Electronic and Structural Properties of Oxides(8), Advancements in Semiconductor Devices and Circuit Design(3)

Publications32 total

Field-Driven Hopping Transport of Oxygen Vacancies in Memristive Oxide Switches with Interface-Mediated Resistive Switching
Physical Review Applied·2018· 45 cited
Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance
Scientific Reports·2016· 88 citedOpen Access
Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays
Solid-State Electronics·2015· 51 citedOpen Access
Resistive switching characteristics of integrated polycrystalline hafnium oxide based one transistor and one resistor devices fabricated by atomic vapor deposition methods
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2015· 20 cited
RRAM Reliability/Performance Characterization through Array Architectures Investigations
2015· 14 citedOpen Access
Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays
IEEE Transactions on Electron Devices·2015· 59 citedOpen Access
Relationship among Current Fluctuations during Forming, Cell-To-Cell Variability and Reliability in RRAM Arrays
2015· 23 citedOpen Access
Graphene based electron field emitter
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2015· 12 cited
Preface
Thin Solid Films·2014Open Access
In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN cells
Journal of Applied Physics·2014· 52 citedOpen Access
Electrical characterization of read window in reram arrays under different SET/RESET cycling conditions
2014· 18 cited
(Invited) Resistive Switching and Current Status of HfO<sub>2</sub>-based RRAM
ECS Meeting Abstracts·2014
(Invited) Resistive Switching and Current Status of HfO<sub>2</sub>-based RRAM
ECS Transactions·2014· 3 cited
Engineering of the Chemical Reactivity of the Ti/HfO<sub>2</sub> Interface for RRAM: Experiment and Theory.
ACS Applied Materials & Interfaces·2014· 62 citedOpen Access
Statistical analysis of resistive switching characteristics in ReRAM test arrays
2014· 30 cited
E-MRS Symposium H: Multifunctional Binary and Complex Oxide Films and Nanostructures for Microelectronic Applications – Preface
2014
(Invited) HfO<sub>2</sub>-Based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays
ECS Transactions·2013· 15 citedOpen Access
Side channel attacks and the non volatile memory of the future
2012· 4 citedOpen Access
<i>In-operando</i> and non-destructive analysis of the resistive switching in the Ti/HfO<sub>2</sub>/TiN-based system by hard x-ray photoelectron spectroscopy
Applied Physics Letters·2012· 64 cited
Nanosession: Valence Change Memories ‐ A Look Inside
Frontiers in Electronic Materials·2012
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Frequent Co-authors

Thomas Schroeder(18), Damian Walczyk(15), Christian Wenger(15), M. Sowińska(9), T. Bertaud(8), Bernd Tillack(7), D. Wolansky(6), Alessandro Grossi(6), Cristian Zambelli(6), P. Olivo(6), E. Miranda(5), Pauline Calka(5), S. Thieß(5), Valeriy Stikanov(5), Mindaugas Lukosius(4), Mirko Fraschke(4), J. Da̧browski(4), P. Zaumseil(4), Grzegorz Łupina(4), Gunter Schoof(3)