P.D. Hoh

IBM (United States) — United States

Engineering · Physical Sciences

7h-index392citations16works0.02yr avg
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Research Topics

Semiconductor materials and devices(10), Metal and Thin Film Mechanics(3), Advancements in Semiconductor Devices and Circuit Design(3), Semiconductor Lasers and Optical Devices(3), Integrated Circuits and Semiconductor Failure Analysis(3)

Publications16 total

Thermal/electrical behavior of 1 300-nm quad laser arrays in various packaging arrangements
2003· 7 cited
Plasma-etching processes for ULSI semiconductor circuits
IBM Journal of Research and Development·1999· 57 cited
Challenge of 1-Gb DRAM development when using optical lithography
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1997· 5 cited
A Novel 1Gb Trench DRAM Cell With Raised Shallow Trench Isolation (RSTI)
1997· 1 cited
<title>Viability of conventional high-NA KrF imaging for sub-0.25-um lithography</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1996· 2 cited
Improvements in index alignment method for laser-fiber array packaging
IEEE Transactions on Components Packaging and Manufacturing Technology Part B·1994· 18 cited
Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment
Applied Physics Letters·1989· 127 cited
A GaAs MESFET IC for optical multiprocessor networks
IEEE Transactions on Electron Devices·1989· 55 citedOpen Access
A GaAs MESFET 16*16 crosspoint switch at 1700 Mbits/sec
10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988.·1988· 6 cited
Characterization of GaAs self-aligned refractory-gate metal-semiconductor field-effect transistor (MESFET) integrated circuits
Journal of Applied Physics·1987· 17 cited
High Quality Deposition of SiO<sub>2</sub> Downstream from a Microwave Discharge
MRS Proceedings·1987· 5 cited
Reactive Ion Etching of WSi<sub>0.6</sub>Gates for GaAs MESFETS
MRS Proceedings·1986
Controlled modification of organic polymer surfaces by continuous wave far-ultraviolet (185 nm) and pulsed laser (193 nm) radiation: XPS studies
Journal of the American Chemical Society·1984· 70 cited
Summary Abstract: Quantitative particulate contamination studies utilizing reduced turbulence pumping and venting
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·1984· 4 cited
A computer calculation of step coverage in SiO thin films
Thin Solid Films·1982· 1 cited
Improved step coverage by ion beam resputtering
Journal of Vacuum Science and Technology·1981· 17 cited

Frequent Co-authors

Agnese Callegari(4), J. Feder(3), J. H. Greiner(3), J. H. Magerlein(3), Andrew Pomerene(3), Munir D. Naeem(2), C.J. Anderson(2), Stuart Bermon(2), H.J. Hovel(2), G.J. Scott(2), Merlin C. Thomas(2), S. Scontras(2), G. R. Proto(2), Timothy R. Farrell(2), Ronald Nunes(2), Donald J. Samuels(2), Will Conley(2), D. A. Buchanan(1), D. Lacey(1), Sylvain Lazare(1)