Seiji Samukawa

National Yang Ming Chiao Tung University — Taiwan

Engineering · Physical Sciences

40h-index8.8kcitations670works3.62yr avg
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Research Topics

Semiconductor materials and devices(276), Plasma Diagnostics and Applications(183), Nanowire Synthesis and Applications(147), Metal and Thin Film Mechanics(90), Advancements in Semiconductor Devices and Circuit Design(81)

Publications669 total

Neutral-beam etching with high selectivity and low damage for GaN-based materials
Journal of Applied Physics·2026Open Access
<i>(Invited)</i> Neutral Beam Etching of InGaN/GaN and AlGaInP for Full-Color Micro-LEDs: Surface Damage Mitigation and Etch Profile Control
ECS Meeting Abstracts·2025
Damage-Free Neutral Beam Etching for Gate Recess in E-Mode AlGaN/GaN HEMTs
IEEE Electron Device Letters·2025
Neutral Beam Enhanced Surface Reactions and Highly Selective Etching for Gan-Based Materials
SSRN Electronic Journal·2025Open Access
Threshold Voltage Stability in AlGaN/GaN MIS-HEMT Structure Under Cryogenic Environment
IEEE Transactions on Electron Devices·2024· 4 cited
Reduction of interface defects in gate-recessed GaN HEMTs by neutral beam etching
Materials Today Advances·2024· 6 citedOpen Access
Performance improvement of blue light micro-light emitting diodes (&lt; 20 μm) by neutral beam etching process
Materials Today Advances·2024· 7 citedOpen Access
Performance comparison of InGaN-based 40–80 μm micro-LEDs fabricated with and without plasma etching
Materials Today Advances·2024· 2 citedOpen Access
Electrochemical biosensor based on an atomic layered composite of graphene oxide/graphene as an electrode material towards selective and sensitive detection of miRNA-21
Microchemical Journal·2024· 17 cited
Investigation on Germanium Transistors with HfO<sub>x-</sub>Based Gate Stacks for CMOS Operations
ECS Journal of Solid State Science and Technology·2024Open Access
Effect of Film Morphology on Electrical Conductivity of PEDOT:PSS
Nanomaterials·2023· 9 citedOpen Access
3.5 × 3.5 μm2 GaN blue micro-light-emitting diodes with negligible sidewall surface nonradiative recombination
Nature Communications·2023· 58 citedOpen Access
Crumpled graphene induced by commercial Heat-Shrinkable material for chemiresistive biosensors toward cancer biomarker detection
Microchemical Journal·2023· 8 cited
Effect of Interfacial Oxide Layers on Self-Doped PEDOT/Si Hybrid Solar Cells
Energies·2023· 1 citedOpen Access
Hydrogen iodide (HI) neutral beam etching characteristics of InGaN and GaN for micro-LED fabrication
Nanotechnology·2023· 5 citedOpen Access
Lifetime of photoexcited carriers in space-controlled Si nanopillar/SiGe composite films investigated by a laser heterodyne photothermal displacement method
Journal of Applied Physics·2023· 3 cited
Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes
2023· 2 cited
Impact of nanopillars on phonon dispersion and thermal conductivity of silicon membranes
Nanoscale·2023· 10 cited
Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing
IEEE Open Journal of Nanotechnology·2023· 11 citedOpen Access
3.5 × 3.5 μm<sup>2</sup> GaN blue micro-light-emitting diodes with negligible sidewall surface nonradiative recombination
Figshare·2023Open Access
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Frequent Co-authors

Yasushi Ishikawa(5), Katsunori Ichiki(4), Yiming Li(4), Shuichi Noda(4), Mitsuru Okigawa(4), Peter Bruggeman(3), Mark J. Kushner(3), Anthony B. Murphy(3), Keisuke Sakamoto(3), Hiroto Ohtake(3), Kazuhiko Endo(3), Firman Mangasa Simanjuntak(3), Takeo Ohno(3), Tomonori Mukai(3), Igor Adamovich(2), Scott Baalrud(2), Annemie Bogaerts(2), Uwe Czarnetzki(2), David B. Graves(2), Satoshi Hamaguchi(2)