Masatomo Sumiya

National Institute for Materials Science — Japan

Physics and Astronomy · Physical Sciences

34h-index6.6kcitations200works2.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(140), Semiconductor materials and devices(60), Ga2O3 and related materials(58), ZnO doping and properties(55), Metal and Thin Film Mechanics(25)

Publications200 total

Effect of strain-induced defects in GaN channel on two-dimensional carrier transport in AlGaN/GaN heterostructures
Applied Physics Letters·2025· 1 cited
Raman Imaging Properties and Phonon Dynamics Analysis of GaInN/GaN Heterostructures using a Double Laser System
physica status solidi (b)·2025
AI-POWERED PERSONALIZATION IN DIGITAL BANKING: A REVIEW OF CUSTOMER BEHAVIOR ANALYTICS AND ENGAGEMENT
American Journal of Interdisciplinary Studies·2025· 4 citedOpen Access
Thermal conductivity of suspended GaN thin film measured by Raman spectroscopy
International Journal of Heat and Mass Transfer·2025· 5 cited
Evaluation of defect density in bulk gallium nitrides by photothermal deflection spectroscopy and steady-state photocapacitance methods
Journal of Crystal Growth·2024
Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application
Japanese Journal of Applied Physics·2023· 7 cited
Characterization of wide-gap semiconductors by photothermal deflection spectroscopy
Japanese Journal of Applied Physics·2023· 4 citedOpen Access
Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam
Journal of Applied Physics·2023· 4 cited
KEY TECHNOLOGIES ON RENEWABLE MATERIALS AND ENERGY RESOURCES FOR PEACE AND SURVIVAL DIPLOMACY OF MANKIND ON THE EARTH
Zenodo (CERN European Organization for Nuclear Research)·2023Open Access
CCDC 2069197: Experimental Crystal Structure Determination
The Cambridge Structural Database·2022Open Access
CCDC 2069195: Experimental Crystal Structure Determination
The Cambridge Structural Database·2022Open Access
CCDC 2069196: Experimental Crystal Structure Determination
The Cambridge Structural Database·2022Open Access
High reactivity of H <sub>2</sub> O vapor on GaN surfaces
Science and Technology of Advanced Materials·2022· 8 citedOpen Access
Naphthobispyrazine Bisimide: A Strong Acceptor Unit for Conjugated Polymers Enabling Highly Coplanar Backbone, Short π–π Stacking, and High Electron Transport
Chemistry of Materials·2022· 31 cited
High‐pressure MOCVD growth of InGaN thick films toward the photovoltaic applications
Fundamental Research·2021· 9 citedOpen Access
Polarization-induced hole doping for long-wavelength In-rich InGaN solar cells
Applied Physics Letters·2021· 11 cited
Extended π-Electron Delocalization in Quinoid-Based Conjugated Polymers Boosts Intrachain Charge Carrier Transport
Chemistry of Materials·2021· 48 cited
Growth of AlxGa1-xN/InyGa1-yN hetero structure on AlN/sapphire templates exhibiting Shubnikov-de Haas oscillation
Journal of Crystal Growth·2021· 1 cited
Fabrication and characterization of GaN-HEMT grown on AlN/SiC templates
The Japan Society of Applied Physics·2021
Passivation of Bulk and Interface Defects in Sputtered-NiO<sub><i>x</i></sub>-Based Planar Perovskite Solar Cells: A Facile Interfacial Engineering Strategy with Alkali Metal Halide Salts
ACS Applied Energy Materials·2021· 41 cited
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Frequent Co-authors

Liwen Sang(18), Shunro Fuke(18), Meiyong Liao(15), Yasuo Koide(14), Hideomi Koinuma(12), M. Kawasaki(9), Bing Ren(7), Atsushi Tsukazaki(6), Akira Ohtomo(5), Kohji Ohtsuka(5), Kentaro Tamura(5), Akira Uedono(5), K. Yoshimura(4), Toshihide Nabatame(4), T. Makino(3), Shigefusa F. Chichibu(3), Takahiro Ito(3), Mamoru Yoshimoto(3), Takashi Sekiguchi(3), Jitsuo Ohta(3)